KI4490DY-HF

SMD Type N-Channel MOSFET SI4490DY-HF (KI4490DY-HF) MOSFET ■ Features ● VDS (V) = 200V ● ID = 4A (VGS = 10V) ● RDS(ON) ＜ 80mΩ (VGS = 10V) ● RDS(ON) ＜ 90mΩ (VGS = 6V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish D +0.040.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) *1 Pulsed Drain Current Avalanch Current Power Dissipation *1 Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ L=0.1mH TA=25℃ TA=70℃ *1 *1: Surface Mounted on 1" x 1" FR4 board. Symbol VDS VGS ID IDM IAS PD RthJA RthJF TJ Tstg 10S Steady State 200 ±20 4 2.85 3.2 2.3 40 15 3.1 1.56 21 40 80 21 150 -55 to 150 Unit V A W ℃/W ℃ ■ Marking Marking 4490 KC**** F www.kexin.com.cn 1 SMD Type N-Channel MOSFET SI4490DY-HF (KI4490DY-HF) MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance *1 On State Drain Current Forward Transconductance *1 Gate Resistance *2 Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Maximum Body-Diode Continuous Current Di...