N-Channel MOSFET. KI4490DY-HF Datasheet

KI4490DY-HF MOSFET. Datasheet pdf. Equivalent

KI4490DY-HF Datasheet
Recommendation KI4490DY-HF Datasheet
Part KI4490DY-HF
Description N-Channel MOSFET
Feature KI4490DY-HF; SMD Type N-Channel MOSFET SI4490DY-HF (KI4490DY-HF) MOSFET ■ Features ● VDS (V) = 200V ● ID = 4.
Manufacture Kexin
Datasheet
Download KI4490DY-HF Datasheet




Kexin KI4490DY-HF
SMD Type
N-Channel MOSFET
SI4490DY-HF (KI4490DY-HF)
MOSFET
Features
VDS (V) = 200V
ID = 4A (VGS = 10V)
RDS(ON) 80mΩ (VGS = 10V)
RDS(ON) 90mΩ (VGS = 6V)
PbFree Package May be Available. The GSuffix Denotes a
PbFree Lead Finish
D
SOP-8
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
G
S
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150) *1
Pulsed Drain Current
Avalanch Current
Power Dissipation
*1
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
TA=25
TA=70
L=0.1mH
TA=25
TA=70
*1
*1: Surface Mounted on 1" x 1" FR4 board.
Symbol
VDS
VGS
ID
IDM
IAS
PD
RthJA
RthJF
TJ
Tstg
10S Steady State
200
±20
4 2.85
3.2 2.3
40
15
3.1 1.56
21
40 80
21
150
-55 to 150
Unit
V
A
W
/W
Marking
Marking
4490
KC**** F
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Kexin KI4490DY-HF
SMD Type
N-Channel MOSFET
SI4490DY-HF (KI4490DY-HF)
MOSFET
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
On State Drain Current
Forward Transconductance *1
Gate Resistance *2
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage *1
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=160V, VGS=0V
VDS=160V, VGS=0V, TJ=55
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=4A
VGS=6V, ID=4A
VGS= 10 V, VDS 5V
VDS=15V, ID=5A
VGS=10V, VDS=100V, ID=4A *2
VGS=10V, VDS=100V, RL=25Ω,
RG=6Ω,ID=4A *2
IF= 2.8A, dI/dt= 100A/μs
IS=2.8A,VGS=0V
*1: Pulse test; pulse width 300 μs, duty cycle 2 %.
*2: Guaranteed by design, not subject to production testing.
Min Typ Max Unit
200 V
1
μA
5
±100 nA
2V
80 mΩ
90
40 A
19 S
0.2 0.85 1.3 Ω
34 42
7.5 nC
12
14 20
20 30
32 50 ns
25 35
70 100
2.8 A
0.75 1.2 V
Typical Characterisitics
40
VGS = 10 V thru 6 V
32
24
16
8 5V
4V
0
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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40
35
30
25
20
15
10 TC = 125 °C
5 25 °C
- 55 °C
0
0123456
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics



Kexin KI4490DY-HF
SMD Type
MOSFET
N-Channel MOSFET
SI4490DY-HF (KI4490DY-HF)
Typical Characterisitics
0.20
2500
0.15
0.10
0.05
VGS = 6 V
VGS = 10 V
0.00
0
8 16 24 32
ID - Drain Current (A)
On-Resistance vs. Drain Current
20
VDS = 100 V
ID = 4.0 A
16
40
2000
1500
Ciss
1000
500
0
0
Crss
40
Coss
80 120
160
VDS - Drain-to-Source Voltage (V)
Capacitance
2.5
VGS = 10 V
ID = 4.0 A
2.0
200
12 1.5
8 1.0
4 0.5
0
0 15 30 45 60
Qg - Total Gate Charge (nC)
Gate Charge
50
0.0
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.25
TJ = 150 °C
10
0.20
0.15
ID = 4.0 A
TJ = 25 °C
0.10
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.00
02468
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
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