N-Channel MOSFET. Si4826DY Datasheet

Si4826DY MOSFET. Datasheet pdf. Equivalent

Si4826DY Datasheet
Recommendation Si4826DY Datasheet
Part Si4826DY
Description Dual N-Channel MOSFET
Feature Si4826DY; Si4826DY Vishay Siliconix Asymmetrical Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Channel-1 .
Manufacture Vishay
Datasheet
Download Si4826DY Datasheet




Vishay Si4826DY
Si4826DY
Vishay Siliconix
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
0.0155 @ VGS = 10 V
0.0205 @ VGS = 4.5 V
ID (A)
6.3
5.4
9.5
8.2
FEATURES
D 100% Rg Tested
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D2
6 D2
5 D2
Top View
Ordering Information: Si4826DY
Si4826DY-T1 (with Tape and Reel)
D1 D2 D2 D2
G1 G2
S1
N-Channel 1
MOSFET
S2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel 1
Channel 2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =
150_C)NO TAG
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)NO TAG
Maximum Power DissipationNO TAG
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
20
6.3 5.3 9.5 7.0
5.4 4.2 7.6 5.6
30 40
1.3 0.9 2.2 1.15
1.4 1.0 2.4 1.25
0.9 0.64 1.5 0.80
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-AmbientNO TAG
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJC
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
Channel 1
Typ Max
72 90
100 125
51 63
Channel 2
Typ Max
43 53
82 100
25 30
Unit
_C/W
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Vishay Si4826DY
Si4826DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 5.4 A
VGS = 4.5 V, ID = 8.2 A
VDS = 15 V, ID = 6.3 A
VDS = 15 V, ID = 9.5 A
IS = 1.3 A, VGS = 0 V
IS = 2.2 A, VGS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
1.0
20
30
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Channel-1
VDS = 15 V, VGS = 5 V, ID = 6.3 A
Channel-2
VDS = 15 V, VGS = 5 V, ID = - 9.5 A
Channel-1
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Channel-2
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.3 A, di/dt = 100 A/ms
IF = 2.2 A, di/dt = 100 mA/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1.5
0.5
Typ Max Unit
100
100
1
1
15
15
0.018
0.0125
0.024
0.0165
17
28
0.7
0.75
0.022
0.0155
0.030
0.0205
1.1
1.1
V
nA
mA
A
W
S
V
8.0 12
15 23
1.75
5.3
nC
3.2
4.6
5.1
W
2.6
10 20
15 30
5 10
5 10
26 50
ns
44 80
8 16
12 24
30 60
32 70
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Document Number: 71137
S-31726—Rev. B, 18-Aug-03



Vishay Si4826DY
Si4826DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 10 thru 4 V
24
30
24
3V
18
18
CHANNEL 1
Transfer Characteristics
12
6
0
0
0.05
1V 2V
2468
VDS - Drain-to-Source Voltage (V)
10
On-Resistance vs. Drain Current
12
6
0
0.0
TC = 125_C
25_C
- 55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
4.0
1000
Capacitance
0.04
0.03
0.02
0.01
VGS = 4.5 V
VGS = 10 V
800
Ciss
600
400
Coss
200 Crss
0.00
0
6 12 18
ID - Drain Current (A)
24
Gate Charge
10
VDS = 15 V
ID = 6.3 A
8
6
4
2
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Document Number: 71137
S-31726—Rev. B, 18-Aug-03
30
15
0
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6 ID = 6.3 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
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