|
|
Voltage Suppressors. TPC43A Datasheet |
|
|
|
www.vishay.com
TPC6.8A thru TPC51A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
Uni-directional 1500 W TVS in SMPC (TO-277) Package
eSMP® Series
A
1
2
SMPC (TO-277A)
A
Anode
Cathode 1
Cathode 2
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
VWM
VBR
PPPM
TJ max.
Polarity
5.8 V to 43.6 V
6.8 V to 51 V
1500 W
185 °C
Uni-directional
Package
SMPC (TO-277A)
FEATURES
• Junction passivation optimized design Available
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Uni-direction only
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
Peak forward surge current 8.3 ms single half sine-wave (2)
Maximum instantaneous forward voltage at 100 A (3)
Operating junction and storage temperature range
PPPM
IPPM
IFSM
VF
TJ, TSTG
1500
See next table
200
3.5
-65 to +185
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
UNIT
W
A
A
V
°C
Revision: 07-Dec-2018
1 Document Number: 89056
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
TPC6.8A thru TPC51A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT (V)
MIN. NOM. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR (μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
TJ = 150 °C
ID (μA)
TPC6.8A DEP 6.45 6.80 7.14
10
5.80
1500
10 000
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
IPPM (2) (A)
143
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
TYPICAL
TEMP.
COEFFICIENT
OF VBR (3)
T
(%/°C)
10.5 0.047
TPC7.5A DGP 7.13 7.50 7.88
10
6.40
500
5000
133
11.3
0.052
TPC8.2A DKP 7.79 8.20 8.61
10
7.02
200
2000
124
12.1
0.056
TPC9.1A DMP 8.65 9.10 9.55
1.0
7.78
50
500 112 13.4 0.060
TPC10A
DPP
9.5 10.0 10.5
1.0
8.55
20
200 103 14.5 0.064
TPC11A
DRP 10.5 11.0 11.6
1.0
9.40
5.0
50 96.2 15.6 0.067
TPC12A
DTP 11.4 12.0 12.6
1.0
10.2
2.0
10
89.8 16.7
0.070
TPC13A
DVP 12.4 13.0 13.7
1.0
11.1
2.0
10
82.4 18.2
0.072
TPC15A
DXP 14.3 15.0 15.8
1.0
12.8
1.0
10
70.8 21.2
0.076
TPC16A
DZP 15.2 16.0 16.8
1.0
13.6
1.0
10
66.7 22.5
0.078
TPC18A
EEP 17.1 18.0 18.9
1.0
15.3
1.0
10
59.5 25.2
0.080
TPC20A
EGP 19.0 20.0 21.0
1.0
17.1
1.0
10
54.2 27.7
0.082
TPC22A
EKP 20.9 22.0 23.1
1.0
18.8
1.0
10
49.0 30.6
0.084
TPC24A
EMP 22.8 24.0 25.2
1.0
20.5
1.0
10 45.2 33.2 0.085
TPC27A
EPP 25.7 27.0 28.4
1.0
23.1
1.0
10
40.0 37.5
0.087
TPC30A
ERP 28.5 30.0 31.5
1.0
25.6
1.0
10
36.2 41.4
0.088
TPC33A
ETP 31.4 33.0 34.7
1.0
28.2
1.0
10
32.8 45.7
0.089
TPC36A
EVP 34.2 36.0 37.8
1.0
30.8
1.0
15
30.1 49.9
0.090
TPC39A
EXP 37.1 39.0 41.0
1.0
33.3
1.0
15
27.8 53.9
0.091
TPC43A
EZP 40.9 43.0 45.2
1.0
36.8
1.0
20
25.3 59.3
0.092
TPC47A
FEP 44.7 47.0 49.4
1.0
40.2
1.0
20
23.1 64.8
0.092
TPC51A
FGP 48.5 51.0 53.6
1.0
43.6
1.0
20
21.4 70.1
0.093
Notes
(1) VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
TPC10AHM3_A/H (1)
0.10
H
TPC10AHM3_A/I (1)
0.10
I
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1) Automotive grade
Revision: 07-Dec-2018
2 Document Number: 89056
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
TPC6.8A thru TPC51A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted)
100 10 000
TA = 25 °C
Non-Repetitive Pulse
Waveform shown in Fig. 3
VR, measured at
Zero Bias
10 VR measured at
Stand-Off Voltage, VWM
1000
1
0.1
0.1 µs
1.0 µs
10 µs
100 µs 1.0 ms 10 ms
td - Pulse Width (s)
Fig. 1 - Peak Pulse Power Rating Curve
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
1
10
VBR - Breakdown Voltage (V)
100
Fig. 4 - Typical Junction Capacitance
100 100
75
50
25
0
0 50 100 150 200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
100
Peak Value
IPPM
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0
t - Time (ms)
Fig. 3 - Pulse Waveform
4.0
10
1
RthJA, by mounted
on recommended
PCB 2 oz. area
0.1
0.01
0.1 1 10 100
Tp - Pulse Duration (s)
1000
Fig. 5 - Typical Transient Thermal Impedance
Revision: 07-Dec-2018
3 Document Number: 89056
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |