IRFI740G

www.vishay.com IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 66 10 33 Single 0.55 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES Isolated package High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available Sink to lead creepage distance = 4.8 mm Available Dynamic dV/dt rating Low thermal resistance Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI740GPbF SiHFI740...