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MRF24G300H Datasheet, Equivalent, GaN Transistors.

RF Power GaN Transistors

RF Power GaN Transistors

 

 

 

Part MRF24G300H
Description RF Power GaN Transistors
Feature NXP Semiconductors Technical Data RF Po wer GaN Transistors These 300 W CW GaN transistors are designed for industria l, scientific and medical (ISM) applica tions at 2450 MHz.
These devices are su itable for use in CW, pulse, cycling an d linear applications.
These high gain, high efficiency devices are easy to us e and will provide long life in even th e most demanding environments.
These pa rts are characterized and performance i s guaranteed for applications operating in the 2400 to 2500 MHz band.
There is no guarantee of performance when these parts are used in applications designe d outside of t .
Manufacture NXP
Datasheet
Download MRF24G300H Datasheet
Part MRF24G300H
Description RF Power GaN Transistors
Feature NXP Semiconductors Technical Data RF Po wer GaN Transistors These 300 W CW GaN transistors are designed for industria l, scientific and medical (ISM) applica tions at 2450 MHz.
These devices are su itable for use in CW, pulse, cycling an d linear applications.
These high gain, high efficiency devices are easy to us e and will provide long life in even th e most demanding environments.
These pa rts are characterized and performance i s guaranteed for applications operating in the 2400 to 2500 MHz band.
There is no guarantee of performance when these parts are used in applications designe d outside of t .
Manufacture NXP
Datasheet
Download MRF24G300H Datasheet

MRF24G300H

MRF24G300H
MRF24G300H

MRF24G300H

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