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MRF24G300H Dataheets PDF



Part Number MRF24G300H
Manufacturers NXP
Logo NXP
Description RF Power GaN Transistors
Datasheet MRF24G300H DatasheetMRF24G300H Datasheet (PDF)

NXP Semiconductors Technical Data RF Power GaN Transistors These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments. These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. .

  MRF24G300H   MRF24G300H


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