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LDMOS Transistors. AFV10700HS Datasheet |
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NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at
960 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications with large duty cycles and long pulses, such as
IFF, secondary surveillance radars, ADS--B transponders, DME and other
complex pulse chains.
Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency
(MHz) (1)
Signal Type
VDD
Pout
Gps
D
(V)
(W)
(dB)
(%)
1030
1090
1030
1090
Pulse
(128 sec,
10% Duty Cycle)
50
800 Peak
17.5
52.1
700 Peak
19.0
56.1
52
850 Peak
17.5
51.7
770 Peak
19.2
56.1
Typical Performance: In 960–1215 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type
VDD
Pout
Gps
D
(V)
(W)
(dB)
(%)
960
1030
1090
1215
Pulse
(128 sec,
4% Duty Cycle)
50
747 Peak
16.7
50.8
713 Peak
16.5
49.7
700 Peak
16.5
47.1
704 Peak
16.5
54.5
Typical Performance: In 1030 MHz narrowband production test fixture,
IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type
VDD
Pout
Gps
(V) (W) (dB)
1030 (2)
Pulse
(128 sec,
10% Duty Cycle)
50
730 Peak
19.2
D
(%)
58.5
Narrowband Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W) Voltage
1030 (2)
Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at
All Phase
Angles
17.2 Peak
(3 dB
Overdrive)
50
1. Measured in 1030–1090 MHz reference circuit (page 5).
2. Measured in 1030 MHz narrowband production test fixture (page 9).
Result
No Device
Degradation
Features
Internally input and output matched for broadband operation and ease of use
Device can be used in a single--ended, push--pull or quadrature configuration
Qualified up to a maximum of 55 VDD operation
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation and gate voltage pulsing
Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Document Number: AFV10700H
Rev. 2, 08/2019
AFV10700H
AFV10700HS
AFV10700GS
960–1215 MHz, 700 W PEAK, 52 V
AIRFAST RF POWER LDMOS
TRANSISTORS
NI--780H--4L
AFV10700H
NI--780S--4L
AFV10700HS
NI--780GS--4L
AFV10700GS
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017–2019 NXP B.V.
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
1
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Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
VDSS
VGS
VDD
Tstg
TC
TJ
PD
–0.5, +105
–6.0, +10
55, +0
– 65 to +150
–55 to +150
–55 to +225
526
2.63
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Impedance, Junction to Case
Pulse: Case Temperature 75C, 730 W Peak, 128 sec Pulse Width,
10% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1030 MHz
Table 3. ESD Protection Characteristics
ZJC
0.030
C/W
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2000 V
Charge Device Model (per JESD22--C101)
C3, passes 2000 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics (4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 105 Vdc, VGS = 0 Vdc)
IGSS
V(BR)DSS
IDSS
IDSS
—
105
—
—
—
—
—
—
1 Adc
— Vdc
1 Adc
10 Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 260 Adc)
VGS(th)
1.3
1.8
2.3 Vdc
Gate Quiescent Voltage
VGS(Q)
1.6
2.1
2.6 Vdc
(VDD = 50 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 2.6 Adc)
VDS(on)
—
0.28
—
Vdc
Dynamic Characteristics (4,5)
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.16 — pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
(continued)
AFV10700H AFV10700HS AFV10700GS
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RF Device Data
NXP Semiconductors
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Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max Unit
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 730 W Peak
(73 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps 18.0 19.2 21.0 dB
Drain Efficiency
D 54.5 58.5 —
%
Input Return Loss
IRL — –15 –9 dB
Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal
Type
VSWR
Pin
(W) Test Voltage, VDD
1030
Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at All Phase Angles
17.2 Peak
(3 dB Overdrive)
50
Result
No Device Degradation
Table 5. Ordering Information
Device
Tape and Reel Information
AFV10700HR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
AFV10700HSR5
AFV10700GSR5
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
Package
NI--780H--4L
NI--780S--4L
NI--780GS--4L
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
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