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AFV10700HS Datasheet, Equivalent, LDMOS Transistors.RF Power LDMOS Transistors RF Power LDMOS Transistors |
| Part | AFV10700HS |
|---|---|
| Description | RF Power LDMOS Transistors |
| Feature | NXP Semiconductors Technical Data
RF Po wer LDMOS Transistors
N--Channel Enhanc ement--Mode Lateral MOSFETs
These RF p ower transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applic ations with large duty cycles and long pulses, such as IFF, secondary surveill ance radars, ADS--B transponders, DME a nd other complex pulse chains. Typical Performance: In 1030–1090 MHz refere nce circuit, IDQ(A+B) = 100 mA Frequen cy (MHz) (1) Signal Type VDD Pout G ps D (V) (W) (dB) (%) 1030 109 0 1030 1090 Pulse . |
| Manufacture | NXP |
| Datasheet |
| Part | AFV10700HS |
|---|---|
| Description | RF Power LDMOS Transistors |
| Feature | NXP Semiconductors Technical Data
RF Po wer LDMOS Transistors
N--Channel Enhanc ement--Mode Lateral MOSFETs
These RF p ower transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applic ations with large duty cycles and long pulses, such as IFF, secondary surveill ance radars, ADS--B transponders, DME a nd other complex pulse chains. Typical Performance: In 1030–1090 MHz refere nce circuit, IDQ(A+B) = 100 mA Frequen cy (MHz) (1) Signal Type VDD Pout G ps D (V) (W) (dB) (%) 1030 109 0 1030 1090 Pulse . |
| Manufacture | NXP |
| Datasheet |
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