Power MOSFET. IRFPE40 Datasheet

IRFPE40 MOSFET. Datasheet pdf. Equivalent

IRFPE40 Datasheet
Recommendation IRFPE40 Datasheet
Part IRFPE40
Description Power MOSFET
Feature IRFPE40; www.vishay.com IRFPE40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
Manufacture Vishay
Datasheet
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Vishay IRFPE40
www.vishay.com
IRFPE40
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
800
VGS = 10 V
130
17
72
Single
2.0
D
TO-247AC
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-247AC
IRFPE40PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 Ω, IAS = 5.4 A (see fig. 12).
c. ISD 5.4 A, dI/dt 120 A/μs, VDD 600, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
800
± 20
5.4
3.4
22
1.2
490
5.4
15
150
2.0
-55 to +150
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
S15-1038-Rev. C, 04-May-15
1
Document Number: 91247
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRFPE40
www.vishay.com
IRFPE40
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.83
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
800 -
-V
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.2 Ab
VDS = 100 V, ID = 3.2 Ab
-
2.0
-
-
-
-
3.0
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 5.4 A, VDS = 400 V,
see fig. 6 and 13 b
VDD = 400 V, ID = 5.4 A,
Rg = 9.1 Ω, RD = 75 Ω, see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
0.98 - V/°C
- 4.0 V
- ± 100 nA
- 100
μA
- 500
- 2.0 Ω
- -S
1900
470
280
-
-
-
16
36
100
32
5.0
-
-
-
130
17
72
-
-
-
-
-
13 -
pF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
D
Pulsed Diode Forward Current a
integral reverse
G
ISM p - n junction diode
S
- - 5.4
A
- - 22
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.4 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 5.4 A, dI/dt = 100 A/μs b
-
-
550 830 ns
2.4 3.6 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S15-1038-Rev. C, 04-May-15
2
Document Number: 91247
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRFPE40
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFPE40
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S15-1038-Rev. C, 04-May-15
3
Document Number: 91247
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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