V1PM10

www.vishay.com V1PM10 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode FEATURES Very low profile - typical height of 0.65 mm Ideal for automated placement Available Trench MOS Schottky technology Low forward voltage drop Low power loss, high efficiency Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications, in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM IFSM 100 V 25 A VF at IF = 1.0 A (125 °C) 0.58 V TJ max. 175 °C Package MicroSMP (DO-219AD) Circuit configuration Single MECHANICAL DATA Case: MicroSMP (DO-219AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, and RoHS-compliant  Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code...