Schottky Rectifier. MBR10H100 Datasheet

MBR10H100 Rectifier. Datasheet pdf. Equivalent

MBR10H100 Datasheet
Recommendation MBR10H100 Datasheet
Part MBR10H100
Description High Voltage Schottky Rectifier
Feature MBR10H100; www.vishay.com MBR10H100, MBRF10H100, MBRB10H100 Vishay General Semiconductor High Voltage Schottk.
Manufacture Vishay
Datasheet
Download MBR10H100 Datasheet




Vishay MBR10H100
www.vishay.com
MBR10H100, MBRF10H100, MBRB10H100
Vishay General Semiconductor
High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AC
ITO-220AC
MBR10H100
PIN 1
2
1
1
MBRF10H100
PIN 1
PIN 2
CASE
PIN 2
D2PAK (TO-263AB)
K
2
2
1
MBRB10H100
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
Package
10 A
100 V
250 A
0.64 V
4.5 μA
175 °C
TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Circuit configurations
Single
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
SYMBOL
VRRM
VRWM
VDC
IF(AV)
IFSM
IRRM
dV/dt
TJ, TSTG
VAC
MBR10H100
100
100
100
10
250
0.5
10 000
-65 to +175
1500
UNIT
V
A
V/μs
°C
V
Revision: 08-Jun-2018
1 Document Number: 88667
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay MBR10H100
www.vishay.com
MBR10H100, MBRF10H100, MBRB10H100
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage
Maximum reverse current
VF (1)
IR (2)
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
Rated VR
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TJ = 25 °C
TJ = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VALUE
0.77
0.64
0.88
0.73
4.5
6.0
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
Typical thermal resistance
RJC
2.7
MBRF
5.8
MBRB
2.7
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AC
MBR10H100-E3/45
ITO-220AC
MBRF10H100-E3/45
TO-263AB
MBRB10H100-E3/45
TO-263AB
MBRB10H100-E3/81
UNIT WEIGHT (g)
1.80
1.94
1.33
1.33
PACKAGE CODE
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Revision: 08-Jun-2018
2 Document Number: 88667
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay MBR10H100
www.vishay.com
MBR10H100, MBRF10H100, MBRB10H100
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
16
MBR, MBRB
12
8
4 MBRF
0
0 50 100 150 180
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
10 000
1000
100
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
10
1
0.1 TJ = 25 °C
0.01
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
300
TJ = TJ Max.
250 8.3 ms Single Half Sine-Wave
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
10 000
1000
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
TJ = 175 °C
10
TJ = 150 °C
1.0
0.1
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
0.01
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
1.0
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
1
0.1
0.01
0.1 1
t - Pulse Duration (s)
10
Fig. 6 - Typical Transient Thermal Impedance
Revision: 08-Jun-2018
3 Document Number: 88667
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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