Schottky Rectifier. VBT4045BP-E3 Datasheet

VBT4045BP-E3 Rectifier. Datasheet pdf. Equivalent

VBT4045BP-E3 Datasheet
Recommendation VBT4045BP-E3 Datasheet
Part VBT4045BP-E3
Description Trench MOS Barrier Schottky Rectifier
Feature VBT4045BP-E3; www.vishay.com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for.
Manufacture Vishay
Datasheet
Download VBT4045BP-E3 Datasheet




Vishay VBT4045BP-E3
www.vishay.com
VBT4045BP-E3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB)
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
PIN 2
K
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 40 A
TOP max. (AC mode)
TJ max. (DC forward current)
Package
Circuit configuration
40 A
45 V
240 A
0.51 V
150 °C
200 °C
D2PAK (TO-263AB)
Single
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(DC) (1)
IFSM
Operating junction temperature range (AC mode)
Junction temperature in DC forward current without reverse bias, t 1 h
TOP
TJ (1)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
VBT4045BP
45
40
240
-40 to +150
200
UNIT
V
A
A
°C
°C
Revision: 02-Jul-2018
1 Document Number: 89442
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VBT4045BP-E3
www.vishay.com
VBT4045BP-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
IF = 5 A
IF = 20 A
IF = 40 A
IF = 5 A
IF = 20 A
IF = 40 A
VR = 45 A
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.41
0.50
0.57
0.28
0.41
0.51
-
29
MAX.
-
-
0.67
-
-
0.63
3000
85
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RJC
VBT4045BP
0.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
VBT4045BP-E3/4W
1.37
TO-263AB
VBT4045BP-E3/8W
1.37
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
45
40
35
30
25
20
15
10
5 DC Forward Current at
Thermal Equilibrium
0
0 25 50 75 100 125 150 175 200
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
TA = 25 °C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Revision: 02-Jul-2018
2 Document Number: 89442
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VBT4045BP-E3
www.vishay.com
100
TA = 150 °C
TA = 125 °C
10 TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20
40
60 80 100
Percent of Rated Peak reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
100 000
10 000
TJ = 25 °C
f = 1.0 MHz
Vstg = 50 mVp-p
VBT4045BP-E3
Vishay General Semiconductor
1
0.1
0.01
0.1
1
10 100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
1000
100
0.1
1
10
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.360 (9.14)
0.320 (8.13)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
1K2
0.624 (15.85)
0.591 (15.00)
0.130 (3.3)
REF.
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.047 (1.19)
0.047 (1.2) REF.
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 02-Jul-2018
3 Document Number: 89442
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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