www.vishay.com
VBT4045BP-E3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypas...
www.vishay.com
VBT4045BP-E3
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2 1
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1 PIN 2
K HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) Package Circuit configuration
40 A 45 V 240 A 0.51 V 150 °C 200 °C D2PAK (TO-263AB) Single
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
VRRM IF(DC) (1)
IFSM
Operati...