VBT4045BP-E3

www.vishay.com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 1 PIN 2 K HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) Package Circuit configuration 40 A 45 V 240 A 0.51 V 150 °C 200 °C D2PAK (TO-263AB) Single TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum    MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load VRRM IF(DC) (1) IFSM Operati...