Schottky Diodes. SD101CWS-G Datasheet

SD101CWS-G Diodes. Datasheet pdf. Equivalent

SD101CWS-G Datasheet
Recommendation SD101CWS-G Datasheet
Part SD101CWS-G
Description Small Signal Schottky Diodes
Feature SD101CWS-G; www.vishay.com SD101AWS-G, SD101BWS-G, SD101CWS-G Vishay Semiconductors Small Signal Schottky Diod.
Manufacture Vishay
Datasheet
Download SD101CWS-G Datasheet




Vishay SD101CWS-G
www.vishay.com
SD101AWS-G, SD101BWS-G, SD101CWS-G
Vishay Semiconductors
Small Signal Schottky Diodes
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• For general purpose applications
• The SD101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
SD101AWS-G
SD101BWS-G
SD101CWS-G
SD101AWS-G3-08 or SD101AWS-G3-18
SD101BWS-G3-08 or SD101BWS-G3-18
SD101CWS-G3-08 or SD101CWS-G3-18
CIRCUIT
CONFIGURATION
Single
Single
Single
TYPE MARKING
SK
SL
SM
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Power dissipation (infinite heatsink) (1)
Forward continuous current
Maximum single cycle surge
10 μs square wave
SD101AWS-G
SD101BWS-G
SD101CWS-G
VRRM
VRRM
VRRM
Ptot
IF
IFSM
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
60
50
40
150
30
2
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature (1)
Tj
Operating temperature range
Top
Storage temperature range
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
650
125
-55 to +125
-65 to +150
UNIT
V
V
V
mW
mA
A
UNIT
K/W
°C
°C
°C
Rev. 1.3, 01-Jun-17
1 Document Number: 85162
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SD101CWS-G
www.vishay.com
SD101AWS-G, SD101BWS-G, SD101CWS-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Reverse breakdown voltage
Leakage current
Forward voltage drop
Junction capacitance
Reverse recovery time
IR = 10 μA
VR = 50 V
VR = 40 V
VR = 30 V
IF = 1 mA
IF = 15 mA
VR = 0 V, f = 1 MHz
IF = IR = 5 mA,
recover to 0.1 IR
SD101AWS-G
SD101BWS-G
SD101CWS-G
SD101AWS-G
SD101BWS-G
SD101CWS-G
SD101AWS-G
SD101BWS-G
SD101CWS-G
SD101AWS-G
SD101BWS-G
SD101CWS-G
SD101AWS-G
SD101BWS-G
SD101CWS-G
V(BR)
V(BR)
V(BR)
IR
IR
IR
VF
VF
VF
VF
VF
VF
CD
CD
CD
trr
60
50
40
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
MAX.
200
200
200
410
400
390
1000
950
900
2.0
2.1
2.2
1
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
ns
ns
ns
ns
10
A
B
C
1
0.1
0.01
0
18477
0.2 0.4 0.6 0.8
VF - Forward Voltage (V)
1.0
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
100
125 °C
10
100 °C
1 75 °C
50 °C
0.1
25 °C
0.01
0
18479
10 20 30 40
VR - Reverse Voltage (V)
50
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
100
A
B
80 C
60
40
20
0
0
18478
0.2 0.4 0.6 0.8
VF - Forward Voltage (V)
1.0
Fig. 2 - Typical Forward Conduction Curve
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
18480
Tj = 25 °C
A BC
10 20 30 40
VR - Reverse Voltage (V)
50
Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage
Rev. 1.3, 01-Jun-17
2 Document Number: 85162
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SD101CWS-G
www.vishay.com
SD101AWS-G, SD101BWS-G, SD101CWS-G
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 [0.016]
0.25 [0.010]
Cathode bar
1.95 [0.077]
1.60 [0.063]
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
1.6 [0.063]
0.8 [0.031]
Rev. 1.3, 01-Jun-17
3 Document Number: 85162
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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