Schottky Diode. BAT43WS-G Datasheet

BAT43WS-G Diode. Datasheet pdf. Equivalent

BAT43WS-G Datasheet
Recommendation BAT43WS-G Datasheet
Part BAT43WS-G
Description Small Signal Schottky Diode
Feature BAT43WS-G; www.vishay.com BAT42WS-G, BAT43WS-G Vishay Semiconductors Small Signal Schottky Diode DESIGN SUPP.
Manufacture Vishay
Datasheet
Download BAT43WS-G Datasheet




Vishay BAT43WS-G
www.vishay.com
BAT42WS-G, BAT43WS-G
Vishay Semiconductors
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes feature very low turn-on voltage
and fast switching. These devices are
protected by a PN junction guard ring against
excessive voltage, such as electrostatic
discharges
• For general purpose applications
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
BAT42WS-G
BAT43WS-G
ORDERING CODE
BAT42WS-G3-08 or BAT42WS-G3-18
BAT43WS-G3-08 or BAT43WS-G3-18
CIRCUIT CONFIGURATION
Single
Single
TYPE MARKING
LC
LD
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Repetitive peak forward current (1)
Surge forward current (1)
Power dissipation (1)
tp < 1 s, δ < 0.5
tp < 10 ms
VRRM
IF
IFRM
IFSM
Ptot
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
30
200
500
4
150
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Operating temperature range
Storage temperature range
RthJA
Tj
Top
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
650
125
-55 to +125
-55 to +150
UNIT
V
mA
mA
A
mW
UNIT
K/W
°C
°C
°C
Rev. 1.3, 02-Jun-17
1 Document Number: 85238
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay BAT43WS-G
www.vishay.com
BAT42WS-G, BAT43WS-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Reverse breakdown voltage
Leakage current (1)
Forward voltage (1)
Diode capacitance
Reverse recovery time
Note
(1) Pulse test; tp 300 μs, tp/T < 0.02
IR = 100 μA (pulsed)
VR = 25 V
VR = 25 V, Tj = 100 °C
IF = 200 mA
IF = 10 mA
IF = 50 mA
IF = 2 mA
IF = 15 mA
VR = 1 V, f = 1 MHz
IF = 10 mA, IR = 100 mA,
iR = 1 mA, RL = 100 Ω
BAT42WS-G
BAT42WS-G
BAT43WS-G
BAT43WS-G
V(BR)
IR
IR
VF
VF
VF
VF
VF
CD
trr
MIN.
30
260
TYP.
7
MAX.
0.5
100
1000
400
650
330
450
5
UNIT
V
μA
μA
mV
mV
mV
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
250
200
150
100
50
0
0
20981
50 100 150
T - Ambient Temperature (°C)
amb
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
1000
100
10
1
0.1
0.01
0
18444
125 °C
100 °C
75 °C
50 °C
25 °C
10 20 30 40
VR - Reverse Voltage (V)
50
Fig. 3 - Typical Reverse Characteristics
1000
100
125 °C
10
1
- 40 °C
25 °C
0.1
0.01
0 200 400 600 800 1000 1200
18443
VF - Instantaneous Forward Voltage (mV)
Fig. 2 - Typical Forward Characteristics
14
12
10
8
6
4
2
18445
0
0
5 10 15 20 25 30
VR - Reverse Voltage (V)
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.3, 02-Jun-17
2 Document Number: 85238
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay BAT43WS-G
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
BAT42WS-G, BAT43WS-G
Vishay Semiconductors
0.40 [0.016]
0.25 [0.010]
Cathode bar
1.95 [0.077]
1.60 [0.063]
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
1.6 [0.063]
0.8 [0.031]
Rev. 1.3, 02-Jun-17
3 Document Number: 85238
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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