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GDZ-Series
Vishay Semiconductors
Small Signal Zener Diodes
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom. Test current IZT VZ specification Circuit configuration
2.0 to 36 5
Pulse current Single
UNIT V mA
FEATURES
• Silicon planar Zener diodes
Available
• Low Zener impedance and low leakage current
• Popular in Asian designs
• Compact surface mount device
• Ideal for automated mounting
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101: human body model > 8 kV machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
GDZ2V0B-E3-08 to GDZ36B-E3-08
GDZ-series
GDZ2V0B-HE3-08 to GDZ36B-HE3-08 GDZ2V0B-E3-18 to GDZ36B-E3-18
GDZ2V0B-HE3-18 to GDZ36B-HE3-18
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000/box
10 000 (8 mm tape on 13" reel)
10 000/box
PACKAGE
PACKAGE NAME
SOD-323
WEIGHT 4.3 mg
MOLDING COMPOUND FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY LEVEL
MSL level 1 (according J-STD-020)
SOLDERING CONDITIONS 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Power dissipation
Ptot 200
Junction temperature
Tj 150
Storage temperature range
Tstg -55 to +150
Operating temperature range
Top -55 to +150
UNIT mW °C °C °C
Rev. 2.2, 20-Feb-18
1 Document Number: 85766
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
GDZ-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE RANGE
TEST CURRENT
REVERSE CURRENT
PART NUMBER
MARKING CODE
VZ at IZT1 V
IZT1
IZT2
mA
IR at VR μA V
DYNAMIC RESISTANCE
ZZ at IZT1
ZZK at IZT2
MIN.
MAX.
MAX.
MAX.
MAX.
GDZ2V0B
02 2.02 2.2 5
0.5 120 0.5
100
1000
GDZ2V2B
12
2.22 2.41
5
0.5 120 0.7
100
1000
GDZ2V4B
22
2.43 2.63
5
0.5 120 1
100
1000
GDZ2V7B
32
2.69 2.91
5
0.5 100 1
110
1000
GDZ3V0B
42
3.01 3.22
5
0.5 50 1
120
1000
GDZ3V3B
52
3.32 3.53
5
0.5 20 1
120
1000
GDZ3V6B
62
3.6 3.845
5
1 10 1 100 1000
GDZ3V9B
72
3.89 4.16
5
1 5 1 100 1000
GDZ4V3B
82
4.17 4.43
5
1 5 1 100 1000
GDZ4V7B
92
4.55 4.75
5
0.5 2 1
100
800
GDZ5V1B
T1 4.98 5.2 5
0.5 2 1
80
500
GDZ5V6B
T2
5.49 5.73
5
0.5 1 2.5 60
200
GDZ6V2B
T3
6.06 6.33
5
0.5 1 3
60
100
GDZ6V8B
T4
6.65 6.93
5
0.5 0.5 3.5
40
60
GDZ7V5B
T5 7.28 7.6 5
0.5 0.5 4
30
60
GDZ8V2B
T6
8.02 8.36
5
0.5 0.