Switching Diode. IMBD4148 Datasheet

IMBD4148 Diode. Datasheet pdf. Equivalent

IMBD4148 Datasheet
Recommendation IMBD4148 Datasheet
Part IMBD4148
Description Small Signal Switching Diode
Feature IMBD4148; www.vishay.com IMBD4148 Vishay Semiconductors Small Signal Switching Diode 3 12 DESIGN SUPPORT TO.
Manufacture Vishay
Datasheet
Download IMBD4148 Datasheet




Vishay IMBD4148
www.vishay.com
IMBD4148
Vishay Semiconductors
Small Signal Switching Diode
3
12
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• Silicon epitaxial planar diodes
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Models
Available
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
IMBD4148
IMBD4148-E3-08 or IMBD4148-E3-18
IMBD4148-HE3-08 or IMBD4148-HE3-18
CIRCUIT CONFIGURATION TYPE MARKING
Single
A2
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
VR
Peak reverse voltage
VRM
Rectified current (average) half wave
rectification with resist. (1)
f 50 Hz
IF(AV)
Surge forward current
Power dissipation (1)
t < 1 s, Tj = 25 °C
up to Tamb = 25 °C
IFSM
Ptot
VALUE
75
100
150
500
350
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
Operating temperature range
RthJA
Tj
Tstg
Top
Note
(1) Device on fiberglass substrate, see layout on next page
VALUE
450
150
-65 to +150
-55 to +150
UNIT
V
V
mA
mA
mW
UNIT
°C/W
°C
°C
°C
Rev. 1.8, 13-Feb-18
1 Document Number: 85731
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IMBD4148
www.vishay.com
IMBD4148
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Leakage current
Diode capacitance
Reverse recovery time
(see figures)
IF = 10 mA
VR = 70 V
VR = 70 V, Tj = 150 °C
VR = 25 V, Tj = 150 °C
VF = VR = 0
IF = 10 mA to iR = 1 mA,
VR = 6 V, RL = 100
VF
IR
IR
IR
CD
trr
MAX.
1.0
2500
50
30
4
4
UNIT
V
nA
μA
μA
pF
ns
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
12 (0.47)
15 (0.59)
0.8 (0.03)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100 Tj = 100 ° C
10
25 ° C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
18661
VF - Forward Voltage ( V )
Fig. 1 - Forward Current vs. Forward Voltage
10000
1000
Tj = 25 ° C
f = 1 kHz
100
10
1
0.01
18662
0.1 1 10
IF - Forward Current (mA)
100
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.8, 13-Feb-18
2 Document Number: 85731
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IMBD4148
www.vishay.com
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160180 200
18663
Tamb - Ambient Temperature ( °C )
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
IMBD4148
Vishay Semiconductors
10000
1000
100
10
VR = 20 V
1
0 20 40 60 80 100 120 140 160 180 200
18665
Tj - Junction Temperature ( ° C )
Fig. 5 - Leakage Current vs. Junction Temperature
1.1 Tj = 25 ° C
f = 1 MHz
1.0
0.9
0.8
0.7
0
18664
2468
VR - Reverse Voltage (V)
10
Fig. 4 - Relative Capacitance vs. Reverse Voltage
100
10 ν = 0
0.1
0.2
1 0.5
I ν = t p /T
T = 1/fp
I FRM
tp
T
t
0.1
18666
10 -5
10 -4
10 -3
10 -2
tp - Pulse Length ( s )
10 -1
1
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
10
Rev. 1.8, 13-Feb-18
3 Document Number: 85731
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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