SPST Switches. DG612E Datasheet

DG612E Switches. Datasheet pdf. Equivalent

DG612E Datasheet
Recommendation DG612E Datasheet
Part DG612E
Description Quad SPST Switches
Feature DG612E; www.vishay.com DG611E, DG612E, DG613E Vishay Siliconix 1.4 pC Charge Injection, 100 pA Leakage, Qu.
Manufacture Vishay
Datasheet
Download DG612E Datasheet




Vishay DG612E
www.vishay.com
DG611E, DG612E, DG613E
Vishay Siliconix
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches
DESCRIPTION
The DG611E, DG612E, and DG613E contain four
independently selectable SPST switches. They offer
improved performance over the industry standard DG611
and DG611A series. The DG611E and DG612E have all
switches normally closed and normally open respectively,
while the DG613E has 2 normally open and 2 normally
closed switches.
They are designed to operate from a 3 V to 16 V single
supply or from ± 3 V to ± 8 V dual supplies and are fully
specified at +3 V, +5 V and ± 5 V. All control logic inputs
have guaranteed 2 V logic high limits when operating from
+5 V or ± 5 V supplies and 1.4 V when operating from a
+3 V supply.
The DG611E, DG612E, and DG613E switches conduct
equally well in both directions and offer rail to rail analog
signal handling.
1.4 pC low charge injection, coupled with very low switch
capacitance: 3 pF, fast switching speed: ton/toff 23 ns/14 ns
and excellent 3 dB bandwidth: 1 GHz, make these products
ideal for precision instrumentation, high-end data
acquisition, automated test equipment and high speed
communication applications.
Operation temperature is specified from -40 °C to +125 °C.
The DG611E, DG612E, and DG613E are available in 16 lead
SOIC, TSSOP and the space saving 1.8 mm x 2.6 mm
miniQFN packages.
FEATURES
• 3 V to 16 V single supply or ± 3 V to ± 8 V dual
supply
• Low charge injection (1.4 pC typ.)
• Leakage current < 0.25 nA at 85 °C
• Low switch capacitance (Csoff 3 pF typ.)
• Fully specified with single supply operation at
3 V, 5 V, and dual supplies at ± 5 V
• Low voltage, 2.5 V CMOS/TTL compatible
• 1 GHz, 3 dB bandwidth
• Excellent isolation performance (-59 dB at 10 MHz)
• Excellent crosstalk performance (-74 dB at 10 MHz)
• Fully specified from -40 °C to +85 °C and -40 °C to +125 °C
• 16 lead SOIC, TSSOP and miniQFN package
(1.8 mm x 2.6 mm)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Precision instrumentation
• Medical instrumentation
• Automated test equipment
• High speed communications applications
• High-end data acquisition
• Sample and hold applications
• Sample and hold systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611E
SOIC/TSSOP
IN1 1
D1 2
S1 3
V- 4
GND 5
S4 6
D4 7
IN4 8
Top View
16 IN2
15 D2
14 S2
13 V+
12 NC
11 S3
10 D3
9 IN3
Txx
Pin 1
Device Marking: Txx for DG611E
(miniQFN16) Uxx for DG612E
Vxx for DG613E
xx = Date/Lot Traceability Code
DG611E
miniQFN
D1 IN1 IN2 D2
16 15 14 13
S1 1
V- 2
GND 3
S4 4
12 S2
11 V+
10 NC
9 S3
5 678
D4 IN4 IN3 D3
Top View
TRUTH TABLE
LOGIC
0
1
DG611E
On
Off
DG612E
Off
On
S20-0209-Rev. C, 20-Apr-2020
1
Document Number: 78910
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay DG612E
www.vishay.com
DG611E, DG612E, DG613E
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG613E
SOIC/TSSOP
IN1 1
D1 2
S1 3
V- 4
GND 5
S4 6
D4 7
IN4 8
Top View
16 IN2
15 D2
14 S2
13 V+
12 NC
11 S3
10 D3
9 IN3
DG613E
miniQFN
D1 IN1 IN2 D2
16 15 14 13
S1 1
V- 2
GND 3
S4 4
12 S2
11 V+
10 NC
9 S3
5 678
D4 IN4 IN3 D3
Top View
Vxx
Pin 1
Device Marking: Vxx for DG613E
(miniQFN16)
TRUTH TABLE
LOGIC
0
1
ORDERING INFORMATION
TEMP. RANGE
SW1, SW4
Off
On
PACKAGE
16-pin TSSOP
-40 °C to +125 °C a
16-pin narrow SOIC
16-pin miniQFN
Note
a. -40 °C to +85 °C datasheet limits apply
SW2, SW3
On
Off
PART NUMBER
DG611EEQ-T1-GE4
DG612EEQ-T1-GE4
DG613EEQ-T1-GE4
DG611EEY-T1-GE4
DG612EEY-T1-GE4
DG613EEY-T1-GE4
DG611EEN-T1-GE4
DG612EEN-T1-GE4
DG613EEN-T1-GE4
S20-0209-Rev. C, 20-Apr-2020
2
Document Number: 78910
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay DG612E
www.vishay.com
DG611E, DG612E, DG613E
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
LIMIT
UNIT
V+ to V-
-0.3 to +18
GND to V-
VS, VD
Digital inputs a
18
(V-) - 0.3 to (V+) + 0.3
or 30 mA, whichever occurs first
(GND) - 0.3 to 18
V
Continuous current (any terminal)
Peak current, S or D (pulsed 1 ms, 10 % duty cycle)
30
mA
100
Storage temperature
Power dissipation (package) b
16-pin TSSOP c
16-pin miniQFN d
16-pin narrow SOIC e
-65 to +150
450
525
640
°C
mW
Thermal resistance (package) b
16-pin TSSOP
16-pin miniQFN
178
152 °C/W
16-pin narrow SOIC
125
ESD / HBM
ESD / CDM
EIA / JESD22-A114-A
EIA / JESD22-C101-A
2K
1K
V
Latch up
JESD78
300 mA
Notes
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 5.6 mW/°C above 70 °C
d. Derate 6.6 mW/°C above 70 °C
e. Derate 8 mW/°C above 70 °C
f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead
terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip
cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
S20-0209-Rev. C, 20-Apr-2020
3
Document Number: 78910
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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