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B80C800DM Dataheets PDF



Part Number B80C800DM
Manufacturers Vishay
Logo Vishay
Description Glass Passivated Ultrafast Bridge Rectifier
Datasheet B80C800DM DatasheetB80C800DM Datasheet (PDF)

B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier ~ ~ ~ ~ Case Style DFM PRIMARY CHARACTERISTICS Package DFM IF(AV) VRRM IFSM IR VF at IF = 0.9 A TJ max. Diode variations 0.9 A 65 V, 125 V, 200 V, 400 V, 600 V 45 A 10 μA 1.0 V 125 °C Quad FEATURES • Ideal for automated placement • High surge current capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization:  For d.

  B80C800DM   B80C800DM



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B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier ~ ~ ~ ~ Case Style DFM PRIMARY CHARACTERISTICS Package DFM IF(AV) VRRM IFSM IR VF at IF = 0.9 A TJ max. Diode variations 0.9 A 65 V, 125 V, 200 V, 400 V, 600 V 45 A 10 μA 1.0 V 125 °C Quad FEATURES • Ideal for automated placement • High surge current capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization:  For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: DFM Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B40 C800DM Maximum repetitive peak reverse voltage Maximum RMS input voltage R- and C-load Maximum average forward output current R- and L-load for free air operation at TA = 45 °C C-load VRRM VRMS IF(AV) 65 40 Maximum DC blocking voltage Maximum peak working voltage Maximum non-repetitive peak voltage Maximum repetitive peak forward surge current Peak forward surge current single sine-wave on rated load Rating for fusing at TJ = 125 °C (t < 100 ms) Minimum series resistor C-load at VRMS = ± 10 % Maximum load capacitance + 50 % - 10 % VDC VRWM VRSM IFRM IFSM I2t RT CL 65 90 100 1.0 5000 Operating junction temperature range Storage temperature range TJ TSTG B80 C800DM 125 80 125 180 200 2.0 B125 C800DM 200 125 0.9 0.8 200 300 350 10 45 10 4.0 B250 C800DM 400 250 400 600 650 8.0 B380 C800DM 600 380 600 900 1000 12.0 UNIT V V A V V V A A A2s  2500 1000 500 200 μF - 40 to + 125 - 40 to + 150 °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL B40 C800DM B80 C800DM Maximum instantaneous forward voltage drop per diode 0.9 A VF Maximum reverse current at rated repetitive peak voltage per diode IR B125 C800DM 1.0 10 B250 C800DM B380 C800DM UNIT V μA Revision: 16-Aug-13 1 Document Number: 88533 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B40 C800DM B80 C800DM B125 C800DM B250 C800DM B380 C800DM UNIT Typical thermal resistan.


TCMT4606 B80C800DM B125C800DM


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