B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
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Vishay General Semiconductor
Glass Passivated Ultrafast Bridge Rectifier
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Case Style DFM
PRIMARY CHARACTERISTICS
Package
DFM
IF(AV) VRRM IFSM
IR VF at IF = 0.9 A
TJ max. Diode variations
0.9 A 65 V, 125 V, 200 V, 400 V, 600 V
45 A 10 μA 1.0 V 125 °C Quad
FEATURES
• Ideal for automated placement • High surge current capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications.
MECHANICAL DATA Case: DFM Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40 C800DM
Maximum repetitive peak reverse voltage
Maximum RMS input voltage R- and C-load
Maximum average forward output current R- and L-load
for free air operation at TA = 45 °C
C-load
VRRM VRMS
IF(AV)
65 40
Maximum DC blocking voltage
Maximum peak working voltage
Maximum non-repetitive peak voltage
Maximum repetitive peak forward surge current
Peak forward surge current single sine-wave on rated load
Rating for fusing at TJ = 125 °C (t < 100 ms)
Minimum series resistor C-load at VRMS = ± 10 %
Maximum load capacitance
+ 50 % - 10 %
VDC VRWM VRSM IFRM IFSM
I2t RT
CL
65 90 100
1.0 5000
Operating junction temperature range Storage temperature range
TJ TSTG
B80 C800DM
125 80
125 180 200
2.0
B125 C800DM
200 125 0.9 0.8 200 300 350 10 45 10 4.0
B250 C800DM
400 250
400 600 650
8.0
B380 C800DM
600 380
600 900 1000
12.0
UNIT
V V
A
V V V A A A2s
2500
1000
500
200 μF
- 40 to + 125 - 40 to + 150
°C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
B40 C800DM
B80 C800DM
Maximum instantaneous forward voltage drop per diode
0.9 A
VF
Maximum reverse current at rated repetitive peak voltage per diode
IR
B125 C800DM
1.0
10
B250 C800DM
B380 C800DM
UNIT V μA
Revision: 16-Aug-13
1 Document Number: 88533
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40 C800DM
B80 C800DM
B125 C800DM
B250 C800DM
B380 C800DM
UNIT
Typical thermal resistan.