Emitting Diode. VSLY5850 Datasheet

VSLY5850 Diode. Datasheet pdf. Equivalent

VSLY5850 Datasheet
Recommendation VSLY5850 Datasheet
Part VSLY5850
Description High Speed Infrared Emitting Diode
Feature VSLY5850; www.vishay.com VSLY5850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface .
Manufacture Vishay
Datasheet
Download VSLY5850 Datasheet




Vishay VSLY5850
www.vishay.com
VSLY5850
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
22114
DESCRIPTION
As part of the SurfLightTM portfolio, the VSLY5850 is an
infrared, 850 nm emitting diode based on GaAlAs surface
emitter chip technology with extreme high radiant intensity,
high optical power and high speed, molded in a clear,
untinted plastic package, with a parabolic lens.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Narrow angle of half intensity: ϕ = ± 3°
• Suitable for high pulse current operation
• Good spectral matching with CMOS cameras
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
• Smoke-automatic fire detectors
• IR Flash
PRODUCT SUMMARY
COMPONENT
VSLY5850
Ie (mW/sr)
600
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
±3
λp (nm)
850
tr (ns)
10
ORDERING INFORMATION
ORDERING CODE
VSLY5850
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs
tp = 100 μs
t 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
100
200
1
190
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.1, 28-Mar-13
1 Document Number: 83160
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VSLY5850
www.vishay.com
VSLY5850
Vishay Semiconductors
200
180
160
140
120 RthJA = 230 K/W
100
80
60
40
20
0
0
22116
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
RthJA = 230 K/W
60
40
20
0
0
22115
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 1 mA
IF = 10 mA
VR = 0 V, f = 1 MHz, E = 0
VF
VF
TKVF
TKVF
IR
Cj
1.65 1.9
2.9
- 1.45
- 1.25
not designed for reverse operation
125
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
Ie
φe
TKφe
ϕ
300 600 900
5100
55
- 0.35
±3
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
λp 840 850 870
Δλ 30
TKλp
0.25
tr 10
Fall time
IF = 100 mA
tf
10
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 1.1, 28-Mar-13
2 Document Number: 83160
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VSLY5850
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
VSLY5850
Vishay Semiconductors
1000
tp/T = 0.01 Tamb < 50 °C
0.02
0.05
0.1
100
0.01
16031
0.2
0.5
0.1 1 10
tp - Pulse Duration (ms)
100
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
100
10
1
0.1
1
16971
10 100 1000
IF - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
10
tp = 100 µs
1
0.1
0.01
0.001
0
22097
0.5 1 1.5 2 2.5 3
VF - Forward Voltage (V)
3.5
Fig. 4 - Forward Current vs. Forward Voltage
1
0.75
IF = 30 mA
0.5
0.25
0
650
21776-1
750 850
λ - Wavelength (nm)
950
Fig. 7 - Relative Radiant Power vs. Wavelength
10 000
1000
100
10 tP = 100 µs
1
0.001
22117
0.01
0.1
IF - Forward Current (A)
1
Fig. 5 - Radiant Intensity vs. Forward Current
0° 10° 20°
30°
1.0
0.9
0.8
0.7
22132
0.6 0.4 0.2 0
40°
50°
60°
70°
80°
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.1, 28-Mar-13
3 Document Number: 83160
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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