MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-...
MOSPEC
Schottky Barrier Rectifiers
Using the
Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Features *Low Forward Voltage. *Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *150℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction. *Plastic Material used Carries Underwriters Laboratory *Flammability Classification 94V-O *Pb free *In compliance with EU RoHs directives
S60D30 Thru S60D60
SCHOTTKY BARRIER RECTIFIERS 60 AMPERES 30-60 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode ) Total Device (Rated VR),TC=100℃
Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz)
VRRM VRWM
VR VR(RMS)
IF(AV)
IFM
S60D 30 35 40 45 50 60
30 35 40 45 50 60
21 25 28 32 35 42 30 60
60
Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz)
IFSM
400
Unit
V V A A
A
Operating and Storage Junction Temperature Range
TJ , TSTG
-65 to +150
℃
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
Rθ j-c
2.0 ℃/w
ELECTRIAL CHA...