Triac. T835T-8G Datasheet

T835T-8G Triac. Datasheet pdf. Equivalent

T835T-8G Datasheet
Recommendation T835T-8G Datasheet
Part T835T-8G
Description Triac
Feature T835T-8G; T835T-8G Datasheet 8 A 800 V D2PAK Snubberless™ Triac A2 A1 A2 G D²PAK A2 A2: Anode2 A1: Anode1 .
Manufacture STMicroelectronics
Datasheet
Download T835T-8G Datasheet




STMicroelectronics T835T-8G
T835T-8G
Datasheet
8 A 800 V D2PAK Snubberless™ Triac
A2
A1 A2
G
D²PAK
A2
A2: Anode2
A1: Anode1
G: Gate
G
A1
Product status link
T835T-8G
Product summary
IT(RMS)
8A
VDRM/VRRM
800 V
VDSM/VRSM
900 V
IGT 35 mA
Features
• High static dV/dt
• High dynamic turn-off commutation (dl/dt)c
• 150 °C maximum junction temperature
• Three quadrants
• Surge capability VDSM, VRSM = 900 V
• Benefits:
– High immunity to false turn-on thanks to high static dV/dt
– Better turn-off in high temperature environments thanks to (dI/dt)c
– Increase of thermal margin due to extended working Tj up to 150 °C
– Good thermal resistance due to non-insulated tab.
Applications
• General purpose AC line load switching
• Motor control circuits
• Home appliances
• Heating
• Lighting
• Inrush current limiting circuits
• Overvoltage crowbar protection
Description
Available in SMD, the T835T-8G Triac can be used for the on/off or phase angle
control function in general purpose AC switching where high commutation capability
is required. The T835T-8G can be used without a snubber RC circuit when the limits
defined are respected.
D2PAK package is UL-94,V0 flammability resin compliance.
Package environmentally friendly Ecopack®2 graded (RoHS and Halogen Free
compliance).
Snubberless™ is a trademark of STMicroelectronics.
DS12531 - Rev 3 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com



STMicroelectronics T835T-8G
T835T-8G
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
Parameter
Value Unit
IT(RMS) RMS on-state current (full sine wave)
Tc = 128 °C
8A
ITSM
Non repetitive surge peak on-state current (full cycle, Tj initial t = 16.7 ms
= 25 °C
t = 20 ms
63
A
60
I2t I2t value for fusing
tp = 10 ms
24 A2s
dl/dt Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns Tj initial = 150 °C, f = 100 Hz 100 A/µs
VDRM/VRRM Repetitive peak off-state voltage (50-60 Hz)
Tj = 125 °C
Tj = 150 °C
800 V
600 V
VDSM/VRSM Non Repetitive peak off-state voltage
tp = 10 ms, Tj = 25 °C
900 V
IGM
VGM
Peak gate current
Peak Gate Voltage
tp = 20 µs, Tj = 150 °C
4A
5V
PG(AV) Average gate power dissipation
Tj = 150 °C
1W
Tstg Storage junction temperature range
-40 to +150 °C
Tj Operating junction temperature range
-40 to +150 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
IGT
VGT
VGD
IL
IH (1)
dV/dt (1)
Test conditions
VD = 12 V, RL = 30 Ω
VD = 12 V, RL = 30 Ω
VD = 12 V, RL = 33 Ω
VD = 600 V, RL = 3.3 kΩ
IG = 1.2 x IGT
IG = 1.2 x IGT
IT = 500 mA, gate open
Tj = 150 °C
VD = 536 V, gate open
VD = 402 V, gate open
(dl/dt)c (1) Without snubber, (dV/dt)c > 20 V/µs
1. For both polarities of A2 referenced to A1.
Quadrants; Tj
I - II - III
I - II - III
I - II - III
I - II - III
I - III
II
Tj = 125 °C
Tj = 150 °C
Tj = 125 °C
Tj = 150 °C
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Min.
Min.
Min.
Min.
Value
1.75
35
1.3
0.2
60
70
40
2000
1000
8
4
Unit
mA
mA
V
V
mA
mA
mA
V/µs
V/µs
A/ms
A/ms
DS12531 - Rev 3
page 2/11



STMicroelectronics T835T-8G
T835T-8G
Characteristics
Table 3. Static characteristics
Symbol
VTM (1)
VTO(1)
RD(1)
Test conditions
IT = 11.3 A, tp = 380 µs
Threshold on-state voltage
Dynamic resistance
IDRM/IRRM
VDRM = VRRM = 800 V
VDRM = VRRM = 600 V
1. For both polarities of A2 referenced to A1.
Tj
25 °C
150 °C
150 °C
25 °C
125°C
150 °C
Max.
Max.
Max.
Max.
Max.
Value
1.6
0.87
80
5
1.0
2.5
Unit
V
V
µA
mA
mA
Symbol
Rth(j-c)
Junction to case (AC)
Table 4. Thermal resistance
Parameter
D²PAK
Max.
Value
1.9
Unit
°C/W
DS12531 - Rev 3
page 3/11







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)