Triacs. T3050H Datasheet

T3050H Triacs. Datasheet pdf. Equivalent

T3050H Datasheet
Recommendation T3050H Datasheet
Part T3050H
Description Triacs
Feature T3050H; T3035H, T3050H 30 A high temperature Snubberless™ Triacs Datasheet - production data Features  H.
Manufacture STMicroelectronics
Datasheet
Download T3050H Datasheet




STMicroelectronics T3050H
T3035H, T3050H
30 A high temperature Snubberless™ Triacs
Datasheet - production data
Features
High current Triac
High immunity level
Low thermal resistance with clip bonding
Very high 3 quadrant commutation at 150 °C
capability
Packages are RoHS (2002/95/EC) compliant
UL certified (ref. file E81734)
Applications
Thanks to its high electrical noise immunity level
and its strong current robustness, the T3035H,
T3050H series is designed for the control of AC
actuators in appliances and industrial systems.
Description
Specifically designed to operate at 150 °C, the
30 A T3035H, T3050H Triacs provide very high
dynamic and enhanced performance in terms of
power loss and thermal dissipation. This allows
the heatsink size optimization, leading to space
and cost effectiveness when compared to
electro-mechanical solutions.
Based on ST Snubberless™ technology, they
offer a specified minimal commutation and high
noise immunity levels valid up to the Tj max.
These devices safely optimize the control of
universal motors and of inductive loads found in
power tools and major appliances.
By using an internal ceramic pad, they provide
voltage insulation (rated at 2500 VRMS).
Table 1: Device summary
Symbol
Value
Unit
IT(RMS)
VDRM/VRRM
IGT
30
600
35 or 50
A
V
mA
January 2017
DocID17029 Rev 6
This is information on a product in full production.
1/12
www.st.com



STMicroelectronics T3050H
Characteristics
T3035H, T3050H
1 Characteristics
Symbol
Table 2: Absolute ratings (limiting values)
Parameter
Value
Unit
IT(RMS)
ITSM
I²t
dl/dt
VDSM /
VRSM
IGM
PG(AV)
Tstg
Tj
RMS on-state current
(full sine wave)
D²PAK,
TO-220AB
TO-220AB Ins.
Non repetitive surge peak on-
state current
(full cycle, Tj initial = 25 °C)
I²t value for fusing
f = 50 Hz
f = 60 Hz
Critical rate of rise of on-state
current
IG = 2 x IGT , tr ≤ 100 ns
Non repetitive surge peak
off-state voltage
f = 120 Hz
tp = 10 ms
Peak forward gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TC = 121 °C
TC = 92 °C
tp = 20 ms
tp = 16.7 ms
tp = 10 ms
30
270
284
487
Tj = 150 °C
50
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
VDRM/VRRM +
100
4
1
-40 to +150
-40 to +150
A
A
A²s
A/µs
V
A
W
°C
°C
Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
T3035H T3050H
IGT(1)
VGT
VGD
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ,
Tj = 150 °C
I - II - III
I - II - III
Max.
Max.
Min.
35 50
1.0
0.15
IH IT = 500 mA
Max.
60
75
IL IG = 1.2 x IGT
I - III
II
Max.
75
90
90
110
dV/dt(2)
(dI/dt)c(2)
VD = 2/3 x VDRM, gate open
Without snubber
Tj = 150 °C Min. 1000 1500
Tj = 150 °C
Min.
33
44
Unit
mA
V
mA
mA
V/µs
A/ms
Notes:
(1)minimum IGT is guaranteed at 20% of IGT max.
(2)for both polarities of A2 referenced to A1.
2/12 DocID17029 Rev 6



STMicroelectronics T3050H
T3035H, T3050H
Symbol
VTM(1)
VTO(1)
Rd(1)
IDRM / IRRM
Table 4: Static characteristics
Test conditions
ITM = 42 A, tp = 380 μs
Tj = 25 °C
Threshold voltage
Tj = 150 °C
Dynamic resistance
Tj = 150 °C
VDRM = VRRM
Tj = 25 °C
Tj = 150 °C
VD/VR = 400 V (at peak mains voltage)
Tj = 150 °C
VD/VR = 200 V (at peak mains voltage)
Tj = 150 °C
Characteristics
Max.
Max.
Max.
Max.
Max.
Max.
Max.
Value
1.55
0.80
15
10
8.5
7
5.5
Unit
V
V
mΩ
µA
mA
Notes:
(1)for both polarities of A2 referenced to A1
Symbol
Rth(j-c)
Rth(j-a)
Table 5: Thermal parameters
Parameter
Junction to case (AC)
Junction to ambient (Scu = 1 cm2)
Junction to ambient
D²PAK,
TO-220AB
TO-220AB Ins.
D²PAK
TO-220AB,
TO-220AB Ins.
Value Unit
0.8
1.6
°C/W
45
60
DocID17029 Rev 6
3/12







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