IGBT. STGW20V60F Datasheet

STGW20V60F IGBT. Datasheet pdf. Equivalent

STGW20V60F Datasheet
Recommendation STGW20V60F Datasheet
Part STGW20V60F
Description IGBT
Feature STGW20V60F; STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datash.
Manufacture STMicroelectronics
Datasheet
Download STGW20V60F Datasheet




STMicroelectronics STGW20V60F
STGFW20V60F,
STGW20V60F, STGWT20V60F
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
1
3
2
1
TO-3PF
TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
Features
Maximum junction temperature: TJ = 175 °C
Very high speed switching series
Tail-less switching off
Low saturation voltage: VCE(sat) = 1.8 V (typ.)
@ IC = 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
E (3) between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGFW20V60F
STGW20V60F
STGWT20V60F
Table 1. Device summary
Marking
Package
GFW20V60F
GW20V60F
GWT20V60F
TO-3PF
TO-247
TO-3P
Packaging
Tube
Tube
Tube
July 2013
This is information on a product in full production.
DocID024851 Rev 1
1/19
www.st.com
19



STMicroelectronics STGW20V60F
Contents
Contents
STGFW20V60F, STGW20V60F, STGWT20V60F
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 DocID024851 Rev 1



STMicroelectronics STGW20V60F
STGFW20V60F, STGW20V60F, STGWT20V60F
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
TO-3PF TO-247
TO-3P
Unit
VCES
IC
IC
(2)
ICP
VGE
PTOT
VISO
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
Continuous collector current at TC = 100 °C
Pulsed collector current
Gate-emitter voltage
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
TSTG Storage temperature range
TJ Operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by maximum junction temperature
(1)
40
(1)
20
(1)
80
52
600
40
20
80
±20
167
3.5
- 55 to 150
- 55 to 175
V
A
A
A
V
W
kV
°C
°C
Table 3. Thermal data
Symbol
Parameter
RthJC
RthJA
Thermal resistance junction-case
Thermal resistance junction-ambient
TO-3PF
2.9
Value
TO-247
Unit
TO-3P
0.9
50
°C/W
°C/W
DocID024851 Rev 1
3/19







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