STGWT20V60F

STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data 1 3 2 1 TO-3PF TAB 3 2 1 TO-247 TO-3P 3 2 1 Figure 1. Internal schematic diagram C (2, TAB) G (1) Features Maximum junction temperature: TJ = 175 °C Very high speed switching series Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A Tight parameters distribution Safe paralleling Low thermal resistance Lead free package Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGFW20V60F STGW20V60F STGWT20V60F Table 1. Device summary Marking Package GFW20V60F GW20V60F GWT20V60F TO-3PF TO-247 TO-3P Packaging Tube Tube Tube July 2013 This is information on a product in full production. DocID024851 Rev 1 1/19 www.st.com 19 Contents Contents STGFW20V60F, STGW20V60F, STGWT20V60F 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...