effect rectifier. FERD40U50C Datasheet

FERD40U50C rectifier. Datasheet pdf. Equivalent

FERD40U50C Datasheet
Recommendation FERD40U50C Datasheet
Part FERD40U50C
Description Field effect rectifier
Feature FERD40U50C; FERD40U50C $ . $ 72)3$% $ . $ Features • ST advanced rectifier process • Stable leakage .
Manufacture STMicroelectronics
Datasheet
Download FERD40U50C Datasheet




STMicroelectronics FERD40U50C
FERD40U50C
$
.
$
72)3$%
$
.
$
Features
ST advanced rectifier process
Stable leakage current over reverse voltage
Reduced leakage current
Low forward voltage drop
High frequency operation
Insulated package: TO-220FPAB
– Insulating voltage: 2000 VRMS sine
Field effect rectifier
Datasheet - production data
Description
This dual rectifier is based on a proprietary
technology that achieved the best in class VF/IR
for a given silicon surface.
Packaged in TO-220FPAB, this device is intended
to be used in rectification and freewheeling
operations in switch-mode power supplies.
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
VF(typ)
2 x 20 A
50 V
+175 °C
0.43 V
June 2015
This is information on a product in full production.
DocID027943 Rev 1
1/8
www.st.com



STMicroelectronics FERD40U50C
Characteristics
1 Characteristics
FERD40U50C
Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current, δ = 0.5
Tc = 120 °C
Tc = 90 °C
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
Tstg Storage temperature range
Tj(1) Maximum operating junction temperature
1.
d----P-----t--o----t
dTj
<
------------1-------------
Rth(j a)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink.
Table 3. Thermal resistance
50
40
20
40
250
-65 to + 175
175
V
A
A
A
°C
°C
Symbol
Parameter
Value (max) Unit
Rth(j-c)
Rth(c)
Junction to case
Coupling
Per diode
Total
4.1
3.3 °C/W
2.4
When diodes 1 and 2 are used simultaneously:
Tj(diode1) = P (diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
VR = VRRM
VR = 35 V
IF = 5 A
Tj = 125 °C IF = 10 A
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
IF = 15 A
Tj = 25 °C
Tj = 125 °C
IF = 20 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.329 x IF(AV) + 0.007 IF2(RMS)
30
20
0.25
0.33
0.41
0.39
0.44
0.43
Max.
0.8
60
460
40
0.46
0.43
0.49
0.48
Unit
mA
mA
µA
mA
V
2/8 DocID027943 Rev 1



STMicroelectronics FERD40U50C
FERD40U50C
Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per diode)
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Figure 2. Average forward current versus
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Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4. Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
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Figure 5. Junction capacitance versus reverse Figure 6. Forward voltage drop versus forward
voltage applied (typical values, per diode)
current (typical values, per diode)
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DocID027943 Rev 1
3/8
8







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