BPW34SE9601

2018-02-23 Silicon PIN Photodiode Version 1.2 BPW 34 S E9601 Features: Suitable for reflow soldering Especially suitable for applications from 400 nm to 1100 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density Applications Photointerrupters Industrial electronics For control and drive circuits IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: BPW 34 S E9601 Photocurrent Ordering Code IP [µA] Ev = 1000 lx, Std. Light A, VR = 5 V 80 (≥ 50) Q65112A1487 2018-02-23 1 Version 1.2 Maximum Ratings (TA = 25 °C) Parameter Operating and storage temperature range Reverse voltage Total Power dissipation ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (TA = 25 °C) Parameter Photocurrent (Ev = 1000 lx, Std. Light A, VR = 5 V) Wavelength of max. sensitivity Spectral range of sensitivity Radiant sensitive area Dimensions of radiant sensitive area Half angle Dark current (VR = 10 V) Spectral sensitivity of the chip (λ = 850 nm) Quantum yield of the chip (λ = 850 nm) Open-circuit voltage (Ev = 1000 lx, Std. Light A) Short-circuit current (Ev = 1000 lx, Std. Light A) Rise and fall time (VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA) Forward voltage (IF = 100 mA, E = 0) Capacitance (VR = 0 V, f = 1 MHz, E = 0) Temperature coefficient of VO BPW 34 S E9601 Symbol Top; Tstg VR Ptot VESD Values -40 ... 100 32 150 2000 Unit °C V mW V Symbol (typ (m...