PIN Photodiode. BPW34SE9601 Datasheet

BPW34SE9601 Photodiode. Datasheet pdf. Equivalent

BPW34SE9601 Datasheet
Recommendation BPW34SE9601 Datasheet
Part BPW34SE9601
Description Silicon PIN Photodiode
Feature BPW34SE9601; 2018-02-23 Silicon PIN Photodiode Version 1.2 BPW 34 S E9601 Features: • Suitable for reflow solder.
Manufacture OSRAM
Datasheet
Download BPW34SE9601 Datasheet




OSRAM BPW34SE9601
2018-02-23
Silicon PIN Photodiode
Version 1.2
BPW 34 S E9601
Features:
Suitable for reflow soldering
Especially suitable for applications from 400 nm to 1100 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
Applications
Photointerrupters
Industrial electronics
For control and drive circuits
IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment
Ordering Information
Type:
BPW 34 S E9601
Photocurrent
Ordering Code
IP [µA]
Ev = 1000 lx, Std. Light A, VR = 5
V
80 (≥ 50)
Q65112A1487
2018-02-23
1



OSRAM BPW34SE9601
Version 1.2
Maximum Ratings (TA = 25 °C)
Parameter
Operating and storage temperature range
Reverse voltage
Total Power dissipation
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics (TA = 25 °C)
Parameter
Photocurrent
(Ev = 1000 lx, Std. Light A, VR = 5 V)
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of radiant sensitive area
Half angle
Dark current
(VR = 10 V)
Spectral sensitivity of the chip
(λ = 850 nm)
Quantum yield of the chip
(λ = 850 nm)
Open-circuit voltage
(Ev = 1000 lx, Std. Light A)
Short-circuit current
(Ev = 1000 lx, Std. Light A)
Rise and fall time
(VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA)
Forward voltage
(IF = 100 mA, E = 0)
Capacitance
(VR = 0 V, f = 1 MHz, E = 0)
Temperature coefficient of VO
BPW 34 S E9601
Symbol
Top; Tstg
VR
Ptot
VESD
Values
-40 ... 100
32
150
2000
Unit
°C
V
mW
V
Symbol
(typ (min)) IP
(typ)
(typ)
λS max
λ10%
(typ)
(typ)
A
LxW
(typ)
ϕ
(typ (max)) IR
(typ)
Sλ typ
(typ)
η
(typ (min)) VO
(typ)
ISC
(typ)
tr, tf
(typ)
VF
(typ)
C0
(typ)
TCV
Values
80 (≥ 50)
Unit
µA
940
(typ) 330
... 1100
7.02
2.65 x 2.65
± 60
2 (≤ 30)
nm
nm
mm2
mm x
mm
°
nA
0.62
A/W
0.90
365 (≥300)
Electro
ns
/Photon
mV
80 µA
0.04
µs
1.3 V
58 pF
-2.6 mV / K
2018-02-23
2



OSRAM BPW34SE9601
Version 1.2
Parameter
Temperature coefficient of ISC
(Std. Light A)
Noise equivalent power
(VR = 10 V, λ = 850 nm)
Detection limit
(VR = 10 V, λ = 850 nm)
Relative Spectral Sensitivity 1) page 12
Srel = f(λ)
100
Srel %
80
60
40
20
0
400
500
600
700
800
900
1nn0nmm0m0 1100
BPW 34 S E9601
(typ)
(typ)
(typ)
Symbol
TCI
NEP
D*
Values
0.18
0.041
6.5e12
Unit
%/K
pW /
Hz½
cm x
Hz½ / W
Photocurrent / Open-Circuit Voltage 1) page 12
IP (VR = 5 V) / VO = f(EV)
10 3
µA
ΙP
OHF01066 10 4
mV
VO
10 2 10 3
VO
10 1 10 2
ΙP
10 0 10 1
10 -1 10 0
10 0 10 1 10 2 10 3 lx 10 4
EV
2018-02-23
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