STPSC2H065

STPSC2H065 Datasheet 650 V, 2 A high surge silicon carbide power Schottky diode AK Product label Product status STPSC2H065 Product summary Symbol Value IF(AV) 2A VRRM 650 V Tj(max.) 175 °C VF(typ.) 1.38 V Features No reverse recovery charge in application current range Switching behavior independent of temperature High forward surge capability ECOPACK2 compliant component Power efficient product Applications Switch mode power supply PFC "DC/DC" converters LLC topologies Boost diode Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost performance in hard switching conditions. DS12989 - Rev 1 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com STPSC2H065 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current Tc = 160 °C(1), DC IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, ...