carbide diode. STPSC10065 Datasheet

STPSC10065 diode. Datasheet pdf. Equivalent

STPSC10065 Datasheet
Recommendation STPSC10065 Datasheet
Part STPSC10065
Description Schottky silicon carbide diode
Feature STPSC10065; .
Manufacture STMicroelectronics
Datasheet
Download STPSC10065 Datasheet




STMicroelectronics STPSC10065
STPSC10065
650 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
ECOPACK®2 compliant component
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
VF (typ.)
10 A
650 V
175 °C
1.30 V
July 2017
DocID030727 Rev 2
This is information on a product in full production.
1/9
www.st.com



STMicroelectronics STPSC10065
Characteristics
STPSC10065
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
TC = 150 °C(1), DC current
650
22
10
IFRM
Repetitive peak forward
current
Tc = 150 °C, Tj = 175 °C, δ = 0.1
42
Unit
V
A
A
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
48
39
210
A
Tstg Storage temperature range
Tj Operating junction temperature(2)
-65 to +175
-40 to +175
°C
°C
Notes:
(1)Value based on Rth(j-c) max.
(2)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Table 3: Thermal parameters
Parameter
Junction to case
Value
Typ. Max.
1.0 1.5
Unit
°C/W
Symbol
IR(1)
VF(2)
Table 4: Static electrical characteristics
Parameter
Test conditions
Min.
Reverse leakage current
Forward voltage drop
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VR = VRRM
IF = 10 A
-
-
-
-
-
Typ.
7
53
1.30
1.45
1.50
Max.
130
900
1.45
1.65
Unit
µA
V
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.97 x IF(AV) + 0.068 x IF2(RMS)
2/9 DocID030727 Rev 2



STMicroelectronics STPSC10065
STPSC10065
Symbol
QCj(1)
Cj
Table 5: Dynamic electrical characteristics
Parameter
Test conditions
Total capacitive charge
Total capacitance
VR = 400 V
VR = 0 V, Tc = 25 °C, F = 1 MHz
VR = 400 V, Tc = 25 °C, F = 1 MHz
Notes:
(1)Most
accurate
value
for
the
capacitive
charge:
=
0
( )
Characteristics
Typ.
34
670
55
Unit
nC
pF
DocID030727 Rev 2
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