TGA2578

® General Description Qorvo’s TGA2578 is a wideband power amplifier fabricated on Qorvo’s 0.25 um GaN on SiC process. Operating from 2 to 6 GHz, it achieves 30 W saturated output power with high efficiency of 40% PAE, and 27 dB small signal gain. Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2578 is ideally suited to support both commercial and defense related applications. The TGA2578 is 100% DC and RF tested on-wafer to ensure compliance to power and PAE specifications. TGA2578 2-6 GHz 30 W GaN Power Amplifier Product Features  Frequency Range: 2–6 GHz  Psat: 45 dBm CW  PAE: 40% CW  Small Signal Gain: 27 dB  Input Return Loss: >20 dB  IM3: -30 dBc @ 40 dBm POUT/Tone  Bias: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical  Chip Dimensions: 6.4 x 5.0 x 0.10 mm Functional Block Diagram 23 4 5 1 6 10 9 8 7 Applications  Communications  Electronic Warfare  Test Instrumentation  EMC Amplifier Data Sheet Rev C, May 2021 | Subject to change without notice Ordering Information Part Description TGA2578 TGA2578 Amplifier, Gel Pack, Qty 10 TGA2578EVB0317 TGA2578 Evaluation Board, Qty 1 1 of 12 www.qorvo.com ® Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation, 85 °C (PDISS) Input Power, CW, 50 Ω, (PIN) Input Power, CW, VSWR 3:1, VD = 30 V, 85 °C, (PIN) Input Power, CW, VSWR 10:1, VD = 28 V, 85 °C (PIN) Channel temperature (TCH) Mounting Te...