Power Amplifier. TGA2578 Datasheet

TGA2578 Amplifier. Datasheet pdf. Equivalent

Part TGA2578
Description Power Amplifier
Feature ® General Description Qorvo’s TGA2578 is a wideband power amplifier fabricated on Qorvo’s 0.25 um Ga.
Manufacture Qorvo
Datasheet
Download TGA2578 Datasheet



TGA2578
®
General Description
Qorvo’s TGA2578 is a wideband power amplifier fabricated
on Qorvo’s 0.25 um GaN on SiC process. Operating from
2 to 6 GHz, it achieves 30 W saturated output power with
high efficiency of 40% PAE, and 27 dB small signal gain.
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2578 is ideally suited to
support both commercial and defense related applications.
The TGA2578 is 100% DC and RF tested on-wafer to
ensure compliance to power and PAE specifications.
TGA2578
2-6 GHz 30 W GaN Power Amplifier
Product Features
Frequency Range: 26 GHz
Psat: 45 dBm CW
PAE: 40% CW
Small Signal Gain: 27 dB
Input Return Loss: >20 dB
IM3: -30 dBc @ 40 dBm POUT/Tone
Bias: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical
Chip Dimensions: 6.4 x 5.0 x 0.10 mm
Functional Block Diagram
23 4
5
16
10 9 8
7
Applications
Communications
Electronic Warfare
Test Instrumentation
EMC Amplifier
Data Sheet Rev B, April 2019 | Subject to change without notice
Ordering Information
Part Description
TGA2578
TGA2578 Amplifier, Gel Pack, Qty 10
TGA2578EVB0317 TGA2578 Evaluation Board, Qty 1
1 of 12
www.qorvo.com



TGA2578
®
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Power Dissipation, 85 °C (PDISS)
Input Power, CW, 50 Ω, (PIN)
Input Power, CW, VSWR 3:1, VD = 30 V,
85 °C, (PIN)
Input Power, CW, VSWR 10:1, VD = 28 V,
85 °C (PIN)
Channel temperature (TCH)
Mounting Temperature (30 Seconds)
Storage Temperature
Value/Range
40 V
-8 to 0 V
5A
-15 to 30 mA
92.5 W
27 dBm
27 dBm
25 dBm
275 °C
320 °C
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
TGA2578
2-6 GHz 30 W GaN Power Amplifier
Recommended Operating Conditions
Parameter
Drain Voltage (VD)
Drain Current (IDQ)
Drain Current Under RF Drive (ID_DRIVE)
Gate Voltage (VG)
Value/Range
28 V
400 mA
3800 mA
-2.8 V
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C , VD = 28 V, ID = 400 mA, VG = -2.8 V Typical
Data de-embedded feeding line losses, data include bond wire effects.
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power @ PIN = 23 dBm
Power Added Efficiency @ Pin = 23 dBm
IM3 @ POUT/Tone = 40 dBm
IM5 @ POUT/Tone = 40 dBm
Small Signal Gain Temperature Coefficient
Output Power Temperature Coefficient
Min Typical
2
27
20
5
45
40
-30
-40
-0.05
-0.02
Max
6
Units
GHz
dB
dB
dB
dBm
%
dBc
dBc
dB/°C
dBm/°C
Data Sheet Rev B, May 2019 | Subject to change without notice
2 of 12
www.qorvo.com





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