RF Transistor. TGF2977-SM Datasheet

TGF2977-SM Transistor. Datasheet pdf. Equivalent

Part TGF2977-SM
Description RF Transistor
Feature Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from D.
Manufacture qorvo
Datasheet
Download TGF2977-SM Datasheet



TGF2977-SM
Product Overview
The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC
HEMT which operates from DC to 12 GHz and 32 V supply.
The device is in an industry standard overmolded package
and is ideally suited for avionics, military, marine and
weather radar. The device can support pulsed and linear
operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
3 x 3mm Package
Functional Block Diagram
N/C N/C N/C N/C
16 15 14 13
N/C 1
VG, RF IN 2
VG, RF IN 3
N/C 4
12 N/C
11 VD, RF OUT
10 VD, RF OUT
9 N/C
56 7 8
N/C N/C N/C N/C
Key Features
Frequency: DC to 12 GHz
Output Power (P3dB)1: 4.8 W
Linear Gain1: 13 dB
Typical PAE3dB1: 50%
Operating Voltage: 32 V
CW and Pulse capable
Note 1: @ 9 GHz Load Pull
Applications
Military radar
Commercial radar
o Avionics
o Marine
o Weather
Ordering info
Part No.
TGF2977-SM
TGF2977-
SMEVBP01
TGF2977-
SMEVBP02
ECCN
EAR99
EAR99
Description
QFN Packaged Part
9 – 10 GHz EVB
EAR99 2.6 – 4.2 GHz EVB
Datasheet Rev. B, July 25, 2017 | Subject to change without notice - 1 of 28 -
www.qorvo.com



TGF2977-SM
TGF2977-SM
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
Absolute Maximum Ratings1
Recommended Operating Conditions1
Parameter
Rating Units
Breakdown Voltage,BVDG
+100
Gate Voltage Range, VG
-7 to +2
Drain Current, IDMAX
0.6
Gate Current Range, IG
See page 20.
Power Dissipation, CW (PDISS)
9.32
RF Input Power, CW, Tamb =
25°C
+30
Channel Temperature, TCH
275
Mounting Temperature
(30Seconds)
320
Storage Temperature
−65 to +150
V
V
A
mA
W
dBm
°C
°C
°C
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
2. Device base temperature = 85 °C.
Parameter
Min Typ Max Units
Operating Temp. Range
−40 +25 +85 °C
Drain Voltage Range, VD
+32 +40 V
Drain Bias Current, IDQ
Drain Current, ID4
Gate Voltage, VG3
25 mA
– 325 – mA
– −2.8 – V
Channel Temperature (TCH)
Power Dissipation (PD)2,4
Power Dissipation (PD), CW2
– 225 °C
– 9.2 W
– 7.4 W
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
3. To be adjusted to desired IDQ
4. Pulsed, 100uS PW, 20% DC
Measured Load Pull Performance – Power Tuned1
Parameter
Frequency, F
5
Drain Voltage, VD
32
Drain Bias Current, IDQ
25
Output Power at 3dB
compression, P3dB
Power Added Efficiency at 3dB
compression, PAE3dB
37.5
52.0
Gain at 3dB compression, G3dB
15.2
Notes:
1.
2.
Pulsed, 100 uS Pulse Width, 20% Duty Cycle
Characteristic Impedance, Zo = 15 .
6
32
25
37.2
56.3
14.4
Typical Values
89
32 32
25 25
37.0 36.8
51.1 45.8
11.4 9.8
10
32
25
36.8
41.7
8.3
Units
12 GHz
32 V
25 mA
36.5 dBm
31.8 %
5.3 dB
Measured Load Pull Performance – Efficiency Tuned1
Parameter
Frequency, F
5
Drain Voltage, VD
32
Drain Bias Current, IDQ
25
Output Power at 3dB
compression, P3dB
37.2
Power Added Efficiency at 3dB
compression, PAE3dB
60.2
Gain at 3dB compression, G3dB
15.5
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
2. Characteristic Impedance, Zo = 15 .
6
32
25
36.3
62.3
14.8
Typical Values
89
32 32
25 25
35.7 36.0
56.6 52.0
12.0 10.4
10
32
25
35.5
47.1
8.9
Units
12 GHz
32 V
25 mA
36.1 dBm
38.2 %
5.8 dB
Datasheet Rev. B, July 25, 2017 | Subject to change without notice - 2 of 28 -
www.qorvo.com





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