TGF2977-SM

Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz and 32 V supply. The device is in an industry standard overmolded package and is ideally suited for avionics, military, marine and weather radar. The device can support pulsed and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request. TGF2977-SM DC – 12 GHz, 32 V, 5 W GaN RF Transistor 3 x 3mm Package Functional Block Diagram N/C N/C N/C N/C 16 15 14 13 N/C 1 VG, RF IN 2 VG, RF IN 3 N/C 4 12 N/C 11 VD, RF OUT 10 VD, RF OUT 9 N/C 56 7 8 N/C N/C N/C N/C Key Features Frequency: DC to 12 GHz Output Power (P3dB)1: 4.8 W Linear Gain1: 13 dB Typical PAE3dB1: 50% Operating Voltage: 32 V CW and Pulse capable Note 1: @ 9 GHz Load Pull Applications Military radar Commercial radar o Avionics o Marine o Weather Ordering info Part No. TGF2977-SM TGF2977SMEVBP01 TGF2977SMEVBP02 ECCN EAR99 EAR99 Description QFN Packaged Part 9 – 10 GHz EVB EAR99 2.6 – 4.2 GHz EVB Datasheet Rev. B, July 25, 2017 | Subject to change without notice - 1 of 28 - www.qorvo.com TGF2977-SM DC – 12 GHz, 32 V, 5 W GaN RF Transistor Absolute Maximum Ratings1 Recommended Operating Conditions1 Parameter Rating Units Breakdown Voltage,BVDG +100 Gate Voltage Range, VG -7 to +2 Drain Current, IDMAX 0.6 Gate Current Range, IG See page 20. Power Dissipation, CW (PDISS) 9.32 RF Input Power, CW, Tamb = 25 °C +30 Channel Temperature...