Power Amplifier. QPA3055P Datasheet

QPA3055P Amplifier. Datasheet pdf. Equivalent

Part QPA3055P
Description Power Amplifier
Feature QPA3055P 100 W S-Band GaN Power Amplifier Product Overview Qorvo’s QPA3055P is a packaged, high-pow.
Manufacture Qorvo
Datasheet
Download QPA3055P Datasheet



QPA3055P
QPA3055P
100 W S-Band GaN Power Amplifier
Product Overview
Qorvo’s QPA3055P is a packaged, high-power S-band
amplifier fabricated on Qorvo’s production 0.25 um GaN
on SiC process (QGaN25). Covering 2.93.5 GHz, the
QPA3055P provides 100 W of saturated output power and
25 dB of large-signal gain while achieving 53% power-
added efficiency.
The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm
bolt-down package with a Cu base for superior thermal
management. It can support a variety of operating
conditions to best support system requirements. With
good thermal properties, it can support a range of bias
voltages and will perform well under both short and long
pulse operations.
The QPA3055P MMIC has DC blocking capacitors on
both RF ports, which are matched to 50 ohms. The
QPA3055P is ideal for both commercial and military radar
systems.
Lead-free and RoHS compliant.
Evaluation board available on request.
Functional Block Diagram
Key Features
Frequency Range: 2.93.5 GHz
PSAT (PIN=25 dBm): 50 dBm
PAE (PIN=25 dBm): > 53 %
Power Gain (PIN=25 dBm): 25 dB
Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm
Alt. Bias: VD = 30 V, IDQ = 1500 mA, PIN = 22 dBm
Characterized at PW = 15 ms, DC = 30%, and PW =
100 us, DC = 10%
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Applications
Radar
1 10
29
38
47
56
Ordering Information
Part No.
QPA3055P
QPA3055PS2
QPA3055PEVB1
Description
100 W S-Band GaN Power Amplifier (10
Pcs.)
Samples (2 pcs.)
Evaluation Board for QPA3055P
Data Sheet Rev. B, June 2018
1 of 26
www.qorvo.com



QPA3055P
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Value/Rang
40eV
Gate Voltage Range (VG)
−8 to +1 V
Peak Drain Current (ID)
11.7 A
Average Drain Current (ID)
5.7 A
Duty Cycle
50%
Gate Current (IG)
300 mA
Power Dissipation (PDISS), 85 °C
Input Power (PIN), Pulsed (15 ms, 30%),
50 , VD=28 V, IDQ=300 mA, 85 °C
Input Power (PIN), Pulsed (15 ms, 30%),
3:1 VSWR, VD=28 V, IDQ=300 mA, 85 °C
Channel Temperature (TCH)
150 W
31 dBm
31 dBm
275 °C
Soldering Temperature (30 seconds)
260 °C
Storage Temperature
−65 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
QPA3055P
100 W S-Band GaN Power Amplifier
Recommended Operating Conditions
Parameter
Drain Voltage (VD)
Value/Range
30 V
Drain Current (IDQ)
300 mA
Gate Voltage (VG), Typical
Operating Temperature
−2.5 V
−40 to +85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Parameter
Operational Frequency Range
Output Power (PIN = 25 dBm)
2.9 GHz
3.2 GHz
3.5 GHz
Min
2.9
Typ
50
50
50
Max
3.6
Units
GHz
dBm
dBm
dBm
Power Added Efficiency (PIN = 25 dBm)
2.9 GHz
3.2 GHz
3.5 GHz
53.5
57.5
56.5
%
%
%
Small Signal Gain (CW)
2.9 GHz
3.2 GHz
3.5 GHz
30.0
32.0
29.5
dB
dB
dB
Input Return Loss (CW)
2.9 GHz
3.2 GHz
3.5 GHz
19
17
22
dB
dB
dB
Output Return Loss (CW)
2.9 GHz
3.2 GHz
3.5 GHz
POUT Temp. Coeff. (8525 °C, PIN = 25 dBm))
Sm. Sig. Gain Temp. Coefficient (85 to −40 °C, CW)
7
6
14
0.001
-0.059
dB
dB
dB
dB/°C
dB/°C
Test conditions, unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 300 mA, VG = −2.5 V Typical, PW = 15 ms, Duty Cycle = 30%
Data Sheet Rev. B, June 2018
2 of 26
www.qorvo.com





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