QPA3055P

QPA3055P 100 W S-Band GaN Power Amplifier Product Overview Qorvo’s QPA3055P is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25). Covering 2.9 – 3.5 GHz, the QPA3055P provides 100 W of saturated output power and 25 dB of large-signal gain while achieving 53% poweradded efficiency. The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm bolt-down package with a Cu base for superior thermal management. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both short and long pulse operations. The QPA3055P MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3055P is ideal for both commercial and military radar systems. Lead-free and RoHS compliant. Evaluation board available on request. Functional Block Diagram Key Features Frequency Range: 2.9 – 3.5 GHz PSAT (PIN=25 dBm): 50 dBm PAE (PIN=25 dBm): > 53 % Power Gain (PIN=25 dBm): 25 dB Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm Alt. Bias: VD = 30 V, IDQ = 1500 mA, PIN = 22 dBm Characterized at PW = 15 ms, DC = 30%, and PW = 100 us, DC = 10% Package Dimensions: 15.2 x 15.2 x 3.5 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Radar 1 10 29 38 47 56 Ordering Information Part No. QPA3055P QPA3055PS2 QPA3...