SiC HEMT. TGF2023-2-01 Datasheet

TGF2023-2-01 HEMT. Datasheet pdf. Equivalent

Part TGF2023-2-01
Description SiC HEMT
Feature TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo T.
Manufacture Qorvo
Datasheet
Download TGF2023-2-01 Datasheet



TGF2023-2-01
TGF2023-2-01
® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT
Product Overview
The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on
SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-01 is designed using Qorvo’s proven QGaN25
production process. This process features advanced field
plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-2-01 typically provides 37.7 dBm of
saturated output power with power gain of 20.7 dB at 3
GHz. The maximum power added efficiency is 71.6 %
which makes the TGF2023-2-01 appropriate for high
efficiency applications.
Lead-free and RoHS compliant
Functional Block Diagram
2
1
Key Features
Frequency Range: DC - 18 GHz
Output Power (P3dB)1: 38 dBm
Maximum PAE1: 71.6%
Linear Gain1: 18 dB
Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Note 1: @ 3 GHz
Pad Configuration
Pad No.
1
2
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
Data Sheet Rev. F, December 2, 2019 | Subject to change without notice
Applications
Defense & Aerospace
Broadband Wireless
Ordering Information
Part Number
TGF2023-2-01
Description
6 Watt GaN HEMT
1 of 23
www.qorvo.com



TGF2023-2-01
TGF2023-2-01
® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Drain to Gate Voltage (VDG)
100 V
Drain Voltage (VD)
Gate Voltage Range (VG)
40 V
7 to 2 V
Drain Current (ID)
Gate Current (IG)
1.438 A
−1.25 to 3.5 mA
Power Dissipation, CW (PD)
See graph on pg.4.
CW Input Power (PIN)
Storage Temperature
+31 dBm
−65 to 150°C
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Parameter
Min Typ Max Units
Drain Voltage Range (VD)
+12 +28 +40  V
Drain Quiescent Current (IDQ) 62.5
mA
Gate Voltage, VG1
−3.7 −2.8 −2.3 V
Gate Leakage: VD = +10 V,
VG = 3.7 V
1.25
mA
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Note:
1. To be adjusted to desired IDQ
RF Characterization Model Optimum Power Tune
Test conditions unless otherwise noted: T = 25°C, Pulse (10% Duty Cycle, 100 µs Width).
Parameter
Typical Value
Frequency (F)
36
8 10
Drain Voltage (VD)
28 28 28
28
28
28 28 28
Bias Current (IDQ)
25 62.5 25
62.5
25
62.5 25 62.5
Output P3dB (P3dB)
38 37.8 38.1 38.0 38.1 38.0 38.1 38.0
Drain Eff. @ P3dB (DE3dB)
60.2 59.1 57.7
57.3
55.4
55.6
53 53.3
Gain @ P3dB (G3dB)
Parallel Resistance (1) (Rp)
Parallel Capacitance (1) (Cp)
Load Reflection Coefficient (2)
(ΓL)
20
65.2
0.318
20.8
65.1
0.312
14.6
63.1
0.324
15.4
62.7
0.321
0.1994° 0.1995° 0.36110° 0.35110°
12.2
59.3
0.341
0.46120°
13
59.7
0.343
10.4
56.1
0.328
11.2
55.8
0.330
0.47120° 0.52126° 0.52127°
Notes:
1. Large signal equivalent output network (normalized).
2. Characteristic Impedance (Zo) = 50 Ω.
Units
GHz
V
mA
dBm
%
dB
Ω∙mm
pF/mm
--
RF Characterization Model Optimum Efficiency Tune
Test conditions unless otherwise noted: T = 25°C, Pulse (10% Duty Cycle, 100 µs Width).
Parameter
Typical Value
Frequency (F)
36
8
Units
10 GHz
Drain Voltage (VD)
28 28 28
28
28
28 28 28
V
Bias Current (IDQ)
25 62.5 25
Output P3dB (P3dB)
36.8 36.7 37.0
Drain Eff. @ P3dB (DE3dB)
65.6 64.3 63.3
Gain @ P3dB (G3dB)
21.6 22.4 15.9
Parallel Resistance (1) (Rp)
110 112 104
Parallel Capacitance (1) (Cp)
Load Reflection Coefficient (2)
L)
0.398 0.384 0.394
0.3964° 0.3962° 0.5597°
Notes:
1.
2.
Large signal equivalent output network (normalized).
Characteristic Impedance (Zo) = 50 Ω.
62.5
37.0
62.5
16.6
100
0.390
0.5397°
25
37
60.5
13.3
99.8
0.394
62.5
37.1
60.1
14.1
94.4
0.390
25
37.1
57.3
11.4
88.9
0.384
62.5
37.1
57.4
12.2
85.9
0.386
0.63110° 0.62111° 0.68120° 0.67121°
mA
dBm
%
dB
Ω∙mm
pF/mm
--
Data Sheet Rev. F, December 2, 2019 | Subject to change without notice
2 of 23
www.qorvo.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)