Power Amplifier. TGA2239-CP Datasheet

TGA2239-CP Amplifier. Datasheet pdf. Equivalent

TGA2239-CP Datasheet
Recommendation TGA2239-CP Datasheet
Part TGA2239-CP
Description Power Amplifier
Feature TGA2239-CP; TGA2239-CP 13.4 – 15.5 GHz 50 W GaN Power Amplifier Product Description Qorvo’s TGA2239-CP is a 3-s.
Manufacture Qorvo
Datasheet
Download TGA2239-CP Datasheet




Qorvo TGA2239-CP
TGA2239-CP
13.4 – 15.5 GHz 50 W GaN Power Amplifier
Product Description
Qorvo’s TGA2239-CP is a 3-stage, 50W power amplifier
operating over the 13.4 to 15.5GHz band. Fabricated on
Qorvo’s production 0.15 um GaN on SiC technology, this
high performance amplifier offers greater than 30dB small-
signal gain and greater than 31% power-added efficiency,
allowing the system designer to achieve superior
performance levels in a cost efficient manner.
The TGA2239-CP is offered in a 10-lead 15 x 15mm bolt-
down package. Assembled with a pure-copper base,
coupled with its high efficiency, the TGA2239-CP minimizes
the strain on the system-level cooling requirements, further
reducing system operating costs. Superior electrical
performance and thermal management makes the
TGA2239-CP ideal for supporting communications and
radar applications in both commercial and military markets.
Both RF ports have integrated DC blocking capacitors and
are fully matched to 50 Ohms.
RoHS compliant.
Product Features
Frequency Range: 13.4 – 15.5 GHz
POUT: >45.5 dBm @ PIN = 22 dBm
PAE: > 31 % @ PIN = 22 dBm
Small Signal Gain: > 30 dB
IM3: < −19 dBc @ 38 dBm POUT/Tone
Bias: VD = +28 V, IDQ = 900 mA, VG = −2.7 V Typical
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Process Technology: QGaN15
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1
2
3
4
5
Applications
Commercial VSAT
Military Satcom
Datalinks
Radar
10
9
8
7
6
Ordering Information
Part No.
TGA2239-CP
TGA2239-CP EVB
Description
13.4 – 15.5 GHz 50 W GaN Power
Amplifier (10 pieces)
TGA2239-CP Evaluation Board
Data Sheet, Rev. A, August 2019
- 1 of 15 -
www.qorvo.com



Qorvo TGA2239-CP
TGA2239-CP
13.4 – 15.5 GHz 50 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Forward Gate Current (IG)
Power Dissipation (PDISS), 85°C
Input Power, CW, 50 Ω, (PIN)
Input Power, CW, VSWR 3:1,
VD = +28 V, 85 °C, (PIN)
Mounting Temperature
(30 Seconds)
Storage Temperature
Value / Range
+29.5V
−5 to 0 V
7.2 A
See plot on page 3
140W
33 dBm
30 dBm
260 °C
−55 to 150 °C
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Recommended Operating
Conditions
Parameter
Value / Range
Drain Voltage (VD)
+28 V
Drain Current (IDQ)
900 mA
Drain Current Under RF Drive
(ID_DRIVE)
See plots p. 7
Gate Current Under RF Drive
(IG_DRIVE)
See plots p. 7
Temperature (TBASE)
−40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power (PIN = 22 dBm)
13.0 GHz
14.5 GHz
15.5 GHz
Power Added Efficiency (PIN = 22 dBm)
13.0 GHz
14.5 GHz
15.5 GHz
IM3 (POUT / Tone = 38 dBm/Tone, 1 MHz Spacing)
IM5 (POUT / Tone = 38 dBm/Tone, 1 MHz Spacing)
Small Signal Gain Temperature Coefficient
Min
13.4
45.5
45.5
45.0
25
25
25
Typ
> 30
> 14
> 9
46.5
47
47
30
32
33
< −19
< −30
0.09
Output Power Temperature Coefficient (PIN = 22 dBm)
(From 25°C to 85°C)
– −0.014
Recommended Operating Voltage
+28
Test conditions unless otherwise noted: 25 °C, VD = +28 V, IDQ = 900 mA, CW operation
Max
15.5
+28
Units
GHz
dB
dB
dB
dBm
%
dBc
dBc
dB/°C
dBm/°C
V
Data Sheet, Rev. A, August 2019
- 2 of 15 -
www.qorvo.com



Qorvo TGA2239-CP
TGA2239-CP
13.4 – 15.5 GHz 50 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Quiescent)
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Under RF drive)
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Under RF drive)
Test Conditions
TBASE = 85°C, VD = +28 V (CW)
At IDQ = 900 mA, PDISS = 25.2 W
TBASE = 85°C, VD = +22 V (CW)
At Freq = 15 GHz, PIN = 24 dBm:
IDQ = 900 mA, ID_Drive = 5.1 A
POUT = 45.4 dBm, PDISS = 77 W
TBASE = 85°C, VD = +28 V (CW)
At Freq = 15 GHz, PIN = 27 dBm:
IDQ = 900 mA, ID_Drive = 5.8 A
POUT = 46.7 dBm, PDISS = 116 W
Value
0.52
98
0.79
146
0.79
177
Units
°C/W
°C
°C/W
°C
°C/W
°C
Notes:
1. Thermal resistance measured to back of package.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Dissipated Power
Dissipated Power vs. Freq. vs. Temperature
130
VD = 28 V, IDQ = 900 mA
120
110
100
90
80
-40 °C @ PIN = 20 dBm
70 25 °C @ PIN = 22 dBm
60 85 °C @ PIN = 27 dBm
50
13 13.5 14 14.5 15 15.5 16
Frequency (GHz)
Dissipated Power vs. Freq. vs. Temperature
85
VD = 22 V, IDQ = 900 mA
80
75
70
65
60 -40 °C @ PIN = 17 dBm
25 °C @ PIN = 20 dBm
55 85 °C @ PIN = 24 dBm
50
45
13 13.5 14 14.5 15 15.5 16
Frequency (GHz)
Data Sheet, Rev. A, August 2019
- 3 of 15 -
www.qorvo.com







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