Power Amplifier. TGA4548-SM Datasheet

TGA4548-SM Amplifier. Datasheet pdf. Equivalent

Part TGA4548-SM
Description Power Amplifier
Feature TGA4548-SM ® 17 – 20 GHz 10 W GaN Power Amplifier Product Overview Qorvo’s TGA4548-SM is a high fre.
Manufacture Qorvo
Datasheet
Download TGA4548-SM Datasheet



TGA4548-SM
TGA4548-SM
® 17 20 GHz 10 W GaN Power Amplifier
Product Overview
Qorvo’s TGA4548-SM is a high frequency, high power
MMIC amplifier fabricated on Qorvo’s production 0.15um
GaN on SiC process (QGaN15). The TGA4548-SM
operates from 17 20 GHz and typically provides > 10 W
saturated output power with power-added efficiency of 25%
and large-signal gain of 18 dB. This combination of high
frequency performance provides the flexibility designers
are looking for to improve system performance while
reducing size and cost. The TGA4548-SM also has an
integrated power detector to support system diagnostics
and other needs.
The TGA4548-SM is offered in a small 5x5.5 mm surface
mount package, matched to 50Ω and has integrated DC
blocking capacitors on both RF ports allowing for simple
system integration. The frequency coverage and
operational flexibility allows it support satellite
communication as well as point to point data links.
The TGA4548-SM is 100% DC and RF tested to ensure
compliance to electrical specifications.
Lead-free and RoHS compliant.
24-Lead 5.0 x 5.5 x 1.7 mm Air Cavity Laminate Package
Key Features
Frequency Range: 17 20 GHz
PSAT (PIN=22 dBm): 40 dBm
PAE (PIN=22 dBm): 25 %
Small Signal Gain: 30 dB
Integrated Power Detector
Bias: VD1= VD2 = VD3 = +28V, ID1 + ID2 + ID3 = 300 mA
Package Dimensions: 5.0 x 5.5 x 1.7 mm
Functional Block Diagram
Performance is typical across frequency. Please
reference electrical specification table and data plots
for more details.
Applications
Point-to-Point Radio
Satellite Communications
Data Sheet Rev. D, November 20, 2019
Ordering Information
Part No.
TGA4548-SM
TGA4548-SMTR7
TGA4548-SMS2
TGA4548-SMEVB
Description
K-band 10W GaN PA
200 pieces on a 7” reel (standard)
Samples (2 pcs. pack)
Evaluation Board
1 of 17
www.qorvo.com



TGA4548-SM
TGA4548-SM
® 17 20 GHz 10 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Rating
Drain Voltage (VD)
29.5 V
Gate Voltage Range (VG)
-8 to 0 V
Drain Current Stage 1 (ID1), Top or Bottom
500 mA
Drain Current Stage 2 (ID2), Top or Bottom
500 mA
Drain Current Stage 3 (ID3), Top and Bottom
2A
Gate Current (IG),
RF Input Power, CW, 50 Ω, T=25 °C
See chart
26 dBm
Dissipated Power (PDISS), CW, 85°C
45 W
Reference Diode Current (Iref)
4 mA
Detector Diode Current (Idet)
Storage Temperature
Mounting Temperature (30 seconds)
4 mA
−55 to +150 °C
260 °C
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Recommended Operating Conditions
Parameter
Min Typ Max Units
Drain Voltage (VD)
+28 V
Drain Current, Quiescent (IDQ)
300
mA
Drain Current, RF (ID_Drive)
Gate Voltage Typ. Range (VG)
See chart page 5
−2.1 to -2.8
mA
V
Gate Current, RF (IG_Drive)
Operating Temp. Range
See chart page 5
−40 +25 +85
mA
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
100 Gate Current Maximum vs. TCH vs. Stage
Total
90
Stage 3
80 Stage 2
70 Stage 1
60
50
40
30
20
10
0
110 120 130 140 150 160 170 180
Channel Temperature (0C)
Electrical Specifications
Parameter
Conditions(1) (2)
Min Typ. Max
Units
Operational Frequency Range
Unless Otherwise
17 20 GHz
Output Power at Saturation, PSAT PIN = +22 dBm
39 40
dBm
Power Added Efficiency, PAE
PIN = +22 dBm
25 %
Small Signal Gain, S21
Frequency = 17.7, 18.7 GHz
Frequency = 19.7 GHz
23.5 30
21 29
dB
Input Return Loss, IRL
10 dB
Output Return Loss, ORL
Third Order Intermodulation, IM3
S21 Temperature Coefficient
PSAT Temperature Coefficient
POUT = +34 dBm/tone
Tdiff = (85 – (−40)) °C
Tdiff = (85 – (−40)) °C, Pin = +23 dBm
7
− 25
−0.06
−0.02
dB
dBc
dB/°C
dBm/°C
Gate Leakage
VD = +10 V, VG = -3.7 V
-6.5 -1.5
0.1
mA
Notes:
1.
2.
Test conditions unless otherwise noted: CW, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, adjusting VG1 = VG2 = VG3, TBASE = +25 °C, Z0 = 50 Ω
TBASE is back side of package
Data Sheet Rev. D, November 20, 2019
2 of 17
www.qorvo.com





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