TGF2023-2-20

TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2023-220 is designed using Qorvo’s proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram 1-16 17 Pad Configuration Pad No. 1-16 17 Backside Symbol VG / RF IN VD / RF OUT Source / Ground Key Features Frequency Range: DC - 14 GHz Output Power (P3dB)1: 50.2 dBm Maximum PAE1: 65.1% Linear Gain1: 17 dB Bias: VD = 12 - 32 V, IDQ = 400 - 2000 mA Technology: QGaN25 on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 mm Note 1: @ 6 GHz Applications Defense & Aerospace Broadband Wireless Data Sheet Rev. E, November 26, 2019 | Subject to change without notice Ordering Information Part Number TGF2023-2-20 Description 100 Watt GaN HEMT 1 of 21 www.qorvo.com TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) Gate Voltage Range (VG) 100 V −7 to +2 V Drain Current (ID...