DatasheetsPDF.com



Part Number TGF2023-2-20
Manufacturers Qorvo
Logo Qorvo
Description SiC HEMT
Datasheet TGF2023-2-20 DatasheetTGF2023-2-20 Datasheet (PDF)

  TGF2023-2-20   TGF2023-2-20
TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2023-220 is designed using Qorvo’s proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram 1-16 17 Pad Configuration Pad No. 1-16 17 Backside Symbol VG / RF IN VD / RF OUT Source / Ground Key Features • Frequency Range: DC - 14 GHz • Output Power (P3dB)1: 50.2 dBm • Maximum PAE1: 65.1% • Linear Gain1: 17 dB • Bias: VD = 12 - 32 V, IDQ = 400 - 2000 mA • Technology: QGaN25 on SiC • Chip Dimensions: 0.82 x 4.56 .



TGA4548-SM TGF2023-2-20 TGA2578-CP


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)