SiC HEMT. TGF2023-2-20 Datasheet

TGF2023-2-20 HEMT. Datasheet pdf. Equivalent

Part TGF2023-2-20
Description SiC HEMT
Feature TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo .
Manufacture Qorvo
Datasheet
Download TGF2023-2-20 Datasheet



TGF2023-2-20
TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Product Overview
The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC
HEMT which operates from DC-14 GHz. The TGF2023-2-
20 is designed using Qorvo’s proven QGaN25 production
process. This process features advanced field plate
techniques to optimize microwave power and efficiency at
high drain bias operating conditions.
The TGF2023-2-20 typically provides 50.2 dBm of
saturated output power with power gain of 14 dB at 6 GHz.
The maximum power added efficiency is 65.1% which
makes the TGF2023-2-20 appropriate for high efficiency
applications.
Lead-free and RoHS compliant
Functional Block Diagram
1-16
17
Pad Configuration
Pad No.
1-16
17
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
Key Features
Frequency Range: DC - 14 GHz
Output Power (P3dB)1: 50.2 dBm
Maximum PAE1: 65.1%
Linear Gain1: 17 dB
Bias: VD = 12 - 32 V, IDQ = 400 - 2000 mA
Technology: QGaN25 on SiC
Chip Dimensions: 0.82 x 4.56 x 0.10 mm
Note 1: @ 6 GHz
Applications
Defense & Aerospace
Broadband Wireless
Data Sheet Rev. E, November 26, 2019 | Subject to change without notice
Ordering Information
Part Number
TGF2023-2-20
Description
100 Watt GaN HEMT
1 of 21
www.qorvo.com



TGF2023-2-20
TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Drain to Gate Voltage (VDG)
Gate Voltage Range (VG)
100 V
7 to +2 V
Drain Current (ID)
Gate Current (IG)
20 A
−20 to 56 mA
Power Dissipation, CW (PD)
See graph on pg.4.
CW Input Power (PIN)
Storage Temperature
+43 dBm
−65 to 150°C
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Parameter
Min Typ Max Units
Drain Voltage Range (VD)
Drain Quiescent Current (IDQ)
+28
1000
 V
mA
Gate Voltage, VG1
−3.7 −2.8 −2.3 V
Gate Leakage: VD = +10 V,
VG = 3.7 V
−20
mA
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Note:
1. To be adjusted to desired IDQ
RF Characterization Model Optimum Power Tune
Test conditions unless otherwise noted: T = 25°C, Pulse (10% Duty Cycle, 100 µs Width).
Parameter
Typical Value
Frequency (F)
36
8 10
Drain Voltage (VD)
28 28 28
28
28
28 28 28
Bias Current (IDQ)
400 1000 400
1000
400
1000
400 1000
Output P3dB (P3dB)
50.3 50.2 50.2
50.2
50.2
50.1 50.2 50.2
PAE @ P3dB (PAE3dB)
62.4 61.7 58.7
58.6
56.1
56
53 53.3
Gain @ P3dB (G3dB)
Parallel Resistance (1) (Rp)
Parallel Capacitance (1) (Cp)
Load Reflection Coefficient (2)
(ΓL)
19.1
64.4
0.264
19.9
64.8
0.255
13.2
59.7
0.291
0.20131° 0.20131° 0.38132°
14
59.2
0.295
0.38132°
10.7
54.8
0.317
0.49137°
11.5
54.4
0.315
9.0
49.6
0.326
9.6
49.2
0.324
0.49138° 0.57143° 0.56143°
Notes:
1. Large signal equivalent output network (normalized).
2. Characteristic Impedance (Zo) = 4 Ω.
Units
GHz
V
mA
dBm
%
dB
Ω∙mm
pF/mm
--
RF Characterization Model Optimum Efficiency Tune
Test conditions unless otherwise noted: T = 25°C, Pulse (10% Duty Cycle, 100 µs Width).
Parameter
Typical Value
Frequency (F)
36
8
10
Drain Voltage (VD)
28 28 28
28
28
28 28 28
Bias Current (IDQ)
400 1000 400
Output P3dB (P3dB)
48.5 48.7 48.8
PAE @ P3dB (PAE3dB)
69.5 68.5
66
Gain @ P3dB (G3dB)
21.1 21.7 14.7
Parallel Resistance (1) (Rp)
126 123 110
Parallel Capacitance (1) (Cp)
Load Reflection Coefficient (2)
(ΓL)
0.392 0.385 0.388
0.4078° 0.3978° 0.58111°
Notes:
1.
2.
Large signal equivalent output network (normalized).
Characteristic Impedance (Zo) = 4 Ω.
1000
48.9
65.1
15.2
103
0.387
0.56112°
400
49.0
62.2
11.8
94.9
0.379
0.64124°
1000
49.1
61.8
12.5
90.3
0.379
400
49.2
58.4
10.1
81.6
0.373
1000
49.1
58.4
10.6
80.5
0.378
0.63125° 0.69133° 0.69133°
Units
GHz
V
mA
dBm
%
dB
Ω∙mm
pF/mm
--
Data Sheet Rev. E, November 26, 2019 | Subject to change without notice
2 of 21
www.qorvo.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)