TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Product Overview
The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2023-220 is designed using Qorvo’s proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appropriate for high efficiency applications.
Lead-free and RoHS compliant
Functional Block Diagram
1-16
17
Pad Configuration
Pad No.
1-16 17 Backside
Symbol
VG / RF IN VD / RF OUT Source / Ground
Key Features
• Frequency Range: DC - 14 GHz • Output Power (P3dB)1: 50.2 dBm • Maximum PAE1: 65.1% • Linear Gain1: 17 dB • Bias: VD = 12 - 32 V, IDQ = 400 - 2000 mA • Technology: QGaN25 on SiC • Chip Dimensions: 0.82 x 4.56 .