CLOCK BUFFER. IDT5V2305 Datasheet

IDT5V2305 BUFFER. Datasheet pdf. Equivalent

IDT5V2305 Datasheet
Recommendation IDT5V2305 Datasheet
Part IDT5V2305
Description HIGH PERFORMANCE CLOCK BUFFER
Feature IDT5V2305; IDT5V2305 2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER 2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER IND.
Manufacture Renesas
Datasheet
Download IDT5V2305 Datasheet




Renesas IDT5V2305
IDT5V2305
2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER
2.5V TO 3.3V HIGH
PERFORMANCE CLOCK
BUFFER
INDUSTRIALTEMPERATURERANGE
IDT5V2305
FEATURES:
• High performance 1:5 clock driver for general purpose applica-
tions
• Operates up to 170MHz at VDD = 2.5V
• Operates up to 200MHz at VDD = 3.3V
• Pin-to-pin skew < 75ps at 3.3V operation
• VDD range: 2.3V to 3.6V
• Output enable glitch suppression
• Available in TSSOP and VFQFPN packages
DESCRIPTION:
The IDT5V2305 is a high performance, low skew clock buffer that
operates up to 200MHz. One bank of five outputs provides low skew copies
of CLK. Through the use of control pin G, the outputs of bank Y(0:4) can
be placed in a low state regardless of CLK input. The device operates in
2.5V and 3.3V environments. The built-in output enable glitch suppression
ensures a synchronized output enable sequence to distribute full period
clock signals.
The IDT5V2305 is characterized for operation from -40°C to +85°C.
FUNCTIONAL BLOCK DIAGRAM
9
G Control Logic
CLK
16
3
Y0
5
Y1
6
Y2
11
Y3
13
Y4
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
c 2014 Integrated Device Technology, Inc.
1
SEPTEMBER 2014
DSC 6177/20



Renesas IDT5V2305
IDT5V2305
2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER
PIN CONFIGURATION
GND
VDD
Y0
GND
Y1
Y2
VDD
GND
1
2
3
4
5
6
7
8
16 CLK
15 VDD
14 VDD
13 Y4
12 GND
11 Y3
10 VDD
9G
TSSOP
TOP VIEW
INDUSTRIALTEMPERATURERANGE
CLK
VDD
1 16
VDD
2
15 VDD
Y0 3
14 NC
NC
4
GND
13
Y4
Y1 5
12 NC
Y2 6
11 Y3
VDD
7
10 NC
89
G VDD
VFQFPN
TOP VIEW
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
VDD Power Supply Voltage
–0.5 to +4.6
VI Input Voltage(2)
–0.5 to VDD +0.5
VO Output Voltage(2)
–0.5 to VDD +0.5
IIK Input Clamp Current
VI < 0 or VI > VDD
±50
IOK Output Clamp Current
VO < 0 or VO > VDD
±50
IO Continuous Total Output Current
VO < 0 to VDD
±50
TSTG Storage Temperature
–65 to +150
Unit
V
V
V
mA
mA
mA
°C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. Not to exceed 4.6V.
CAPACITANCE(TA = +25°C, f = 1MHz, VIN = 0V)
Parameter Description
Min. Typ. Max.
CIN InputCapacitance
— 2.5 —
VI = 0V or VDD
FUNCTION TABLE(1)
Inputs
G CLK
LX
HH
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Output
Y(0:4)
L
H
Unit
pF
2



Renesas IDT5V2305
IDT5V2305
2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER
INDUSTRIALTEMPERATURERANGE
PIN DESCRIPTION
TERMINAL
Symbol I/O
Description
G I Output Enable Control for Y(0:4) Outputs. This output enable is active HIGH. If this pin is Logic HIGH, the Y(0:4) clock outputs will follow the
input clock (CLK). If this pin is logic LOW, the Y(0:4) outputs will drive low independent of the state of CLK.
Y(0:4) O Buffered Output Clocks
CLK I InputReferenceFrequency
GND Ground
VDD PWR DC Power Supply, 2.3V to 3.6V
RECOMMENDED OPERATING RANGE
Symbol
VDD
Description
Internal Power Supply Voltage
VIL Input Voltage LOW
VDD = 3V to 3.6V
VDD = 2.3V to 2.7V
VIH Input Voltage HIGH
VDD = 3V to 3.6V
VDD = 2.3V to 2.7V
VI InputVoltage
IOH Output Current HIGH
VDD = 3V to 3.6V
VDD = 2.3V to 2.7V
IOL Output Current LOW
VDD = 3V to 3.6V
VDD = 2.3V to 2.7V
TA AmbientOperatingTemperature
Min. Typ. Max.
2.3 2.5
3.3 3.6
0.8
0.7
2
1.7
0 VDD
-12
-6
12
6
-40 +85
Unit
V
V
V
V
mA
mA
°C
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Symbol
Parameter
Test Conditions
Min. Typ.
VIK InputVoltage
IIN InputCurrent
IDD Static Device Current(1)
VDD = 3V, IIN = -18mA
VI = 0V or VDD
CLK = 0V or VDD, IO = 0mA, VDD = 3.3V
NOTE:
1. For IDD over frequency, see TEST CIRCUIT AND WAVEFORMS.
Max
- 1.2
±5
25
DC ELECTRICAL CHARACTERISTICS - VDD = 3.3V ± 0.3V
Symbol
Parameter
Test Conditions
Min.
VDD = Min. to Max. IOH = -100μA
VDD - 0.2
VOH HIGH level Output Voltage
VDD = 3V
IOH = -12mA
2.1
IOH = -6mA
2.4
VDD = Min. to Max. IOH = 100μA
VOL LOW level Output Voltage
VDD = 3V
IOH = 12mA
IOH = 6mA
VDD = 3V
VO = 1V
-28
IOH HIGH level Output Current
VDD = 3.3V
VO = 1.65V
VDD = 3.6V
VO = 3.135V
VDD = 3V
VO = 1.95V
28
IOL LOW level Output Current
VDD = 3.3V
VO = 1.65V
VDD = 3.6V
VO = 0.4V
NOTE:
1. All typical values are at respective nominal VDD.
3
Typ.(1)
-36
36
Max
0.2
0.8
0.55
-14
14
Unit
V
μA
μA
Unit
V
V
mA
mA







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