CLOCK BUFFER. IDT5V2310 Datasheet

IDT5V2310 BUFFER. Datasheet pdf. Equivalent

IDT5V2310 Datasheet
Recommendation IDT5V2310 Datasheet
Part IDT5V2310
Description HIGH PERFORMANCE CLOCK BUFFER
Feature IDT5V2310; IDT5V2310 2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER 2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER IND.
Manufacture Renesas
Datasheet
Download IDT5V2310 Datasheet




Renesas IDT5V2310
IDT5V2310
2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER
2.5V TO 3.3V HIGH
PERFORMANCE CLOCK
BUFFER
INDUSTRIALTEMPERATURERANGE
IDT5V2310
FEATURES:
• High performance 1:10 clock driver for general purpose
applications
• Operates up to 200MHz at VDD = 3.3V
• Pin-to-pin skew < 100ps
• VDD range: 2.3V to 3.6V
• Output enable glitch suppression
• Distributes one clock input to two banks of five outputs
• 25Ω on-chip series dampening resistors
• Available in TSSOP package
NOTE: EOL for non-green parts to occur on 5/13/10 per PDN
U-09-01
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
The IDT5V2310 is a high performance, low skew clock buffer that
operates up to 200MHz. Two banks of five outputs each provide low skew
copies of CLK. Through the use of control pins 1G and 2G, the outputs of
banks 1Y(0:4) and 2Y(0:4) can be placed in a low state regardless of CLK
input. The device operates in 2.5V and 3.3V environments. The built-in
output enable glitch suppression ensures a synchronized output enable
sequence to distribute full period clock signals.
The IDT5V2310 is characterized for operation from -40°C to +85°C.
25
3
1Y0
25
4
1Y1
25
5
1Y2
25
8
1Y3
11
1G
13
2G
LOGIC CONTROL
LOGIC CONTROL
CLK
24
25
9
1Y4
21
2Y0
25
20
2Y1
25
17
2Y2
25
16
2Y3
25
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
c 2004 Integrated Device Technology, Inc.
12
2Y4
25
1
DECEMBER 2012
DSC 6173/25



Renesas IDT5V2310
IDT5V2310
2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER
PIN CONFIGURATION
GND
VDD
1Y0
1Y1
1Y2
GND
GND
1Y3
1Y4
VDD
1G
2Y4
1 24
2 23
3 22
4 21
5 20
6 19
7 18
8 17
9 16
10 15
11 14
12 13
TSSOP
TOP VIEW
CLK
VDD
VDD
2Y0
2Y1
GND
GND
2Y2
2Y3
VDD
VDD
2G
INDUSTRIALTEMPERATURERANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
VDD Power Supply Voltage
–0.5 to +4.6
VI Input Voltage(2)
–0.5 to VDD +0.5
VO Output Voltage(2)
–0.5 to VDD +0.5
IIK Input Clamp Current
VI < 0 or VI > VDD
±50
IOK Output Clamp Current
VO < 0 or VO > VDD
±50
IO Continuous Total Output Current
VO < 0 to VDD
±50
TSTG Storage Temperature
–65 to +150
Unit
V
V
V
mA
mA
mA
°C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. Not to exceed 4.6V.
CAPACITANCE(TA = +25°C, f = 1MHz, VIN = 0V)
Parameter Description
Min. Typ.
CIN InputCapacitance
— 2.5
VI = 0V or VDD
Max.
Unit
pF
FUNCTION TABLE(1)
Inputs
1G 2G CLK
L LX
H LH
L HH
H HH
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Outputs
1Y(0:4)
2Y(0:4)
LL
HL
LH
HH
2



Renesas IDT5V2310
IDT5V2310
2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER
INDUSTRIALTEMPERATURERANGE
PIN DESCRIPTION
TERMINAL
Symbol I/O
Description
1G
2G
1Y(0:4)
I
I
O
Output Enable Control for 1Y(0:4) Outputs. This output enable is active HIGH. If this pin is Logic HIGH, the 1Y(0:4) clock outputs will follow the
input clock (CLK). If this pin is logic LOW, the 1Y(0:4) outputs will drive low independent of the state of CLK.
Output Enable Control for 2Y(0:4) Outputs. This output enable is active HIGH. If this pin is Logic HIGH, the 2Y(0:4) clock outputs will follow the
input clock (CLK). If this pin is logic LOW, the 2Y(0:4) outputs will drive low independent of the state of CLK.
Buffered Output Clocks
2Y(0:4)
CLK
O
I
Buffered Output Clocks
Input Reference Frequency
GND Ground
VDD PWR DC Power Supply, 2.3V to 3.6V
RECOMMENDED OPERATING RANGE
Symbol
VDD
Description
Internal Power Supply Voltage
VIL Input Voltage LOW
VDD = 3V to 3.6V
VDD = 2.3V to 2.7V
VIH Input Voltage HIGH
VDD = 3V to 3.6V
VDD = 2.3V to 2.7V
VI InputVoltage
IOH Output Current HIGH
VDD = 3V to 3.6V
VDD = 2.3V to 2.7V
IOL Output Current LOW
VDD = 3V to 3.6V
VDD = 2.3V to 2.7V
TA AmbientOperatingTemperature
Min. Typ. Max.
2.3 2.5
3.3 3.6
0.8
0.7
2
1.7
0 VDD
-12
-6
12
6
-40 +85
Unit
V
V
V
V
mA
mA
°C
DC ELECTRICALCHARACTERISTICS OVER OPERATING RANGE
Symbol
Parameter
Test Conditions
Min.
VIK InputVoltage
IIN InputCurrent
IDD Static Device Current(1)
VDD = 3V, IIN = -18mA
VI = 0V or VDD
CLK = 0V or VDD, IO = 0mA, VDD = 3.3V
NOTE:
1. For IDD over frequency, see TEST CIRCUIT AND WAVEFORMS.
DC ELECTRICAL CHARACTERISTICS - VDD = 3.3V ± 0.3V
Symbol
Parameter
Test Conditions
VDD = Min. to Max. IOH = -100μA
VOH HIGH level Output Voltage
VDD = 3V
IOH = -12mA
IOH = -6mA
VDD = Min. to Max. IOL = 100μA
VOL LOW level Output Voltage
VDD = 3V
IOL = 12mA
IOL = 6mA
VDD = 3V
VO = 1V
IOH HIGH level Output Current
VDD = 3.3V
VO = 1.65V
VDD = 3.6V
VO = 3.135V
VDD = 3V
VO = 1.95V
IOL LOW level Output Current
VDD = 3.3V
VO = 1.65V
VDD = 3.6V
VO = 0.4V
NOTE:
1. All typical values are at respective nominal VDD.
3
Min.
VDD - 0.2
2.1
2.4
-28
28
Typ.
Typ.(1)
-36
36
Max
- 1.2
±5
25
Max
0.2
0.8
0.55
-14
14
Unit
V
μA
μA
Unit
V
V
mA
mA







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)