2-INPUT MULTIPLEXER. IDT74FCT157AT Datasheet

IDT74FCT157AT MULTIPLEXER. Datasheet pdf. Equivalent

Part IDT74FCT157AT
Description QUAD 2-INPUT MULTIPLEXER
Feature IDT74FCT157AT/CT/DT FAST CMOS QUAD 2-INPUT MULTIPLEXER FAST CMOS QUAD 2-INPUT MULTIPLEXER INDUSTRIA.
Manufacture Renesas
Datasheet
Download IDT74FCT157AT Datasheet



IDT74FCT157AT
IDT74FCT157AT/CT/DT
FAST CMOS QUAD 2-INPUT MULTIPLEXER
FAST CMOS
QUAD 2-INPUT
MULTIPLEXER
INDUSTRIALTEMPERATURERANGE
IDT74FCT157AT/CT/DT
OBSOLETE PART
FEATURES:
DESCRIPTION:
• A, C, and D grades
The FCT157T is a high-speed quad 2-input multiplexer built using an
• Low input and output leakage 1µA (max.)
advanced dual metal CMOS technology. Four bits of data from two sources
• CMOS power levels
can be selected using the common select input. The four buffered outputs
• True TTL input and output compatibility:
present the selected data in the true (non-inverting) form.
– VOH = 3.3V (typ.)
The FCT157T has a common, active-low, enable input. When the
– VOL = 0.3V (typ.)
enable input is not active, all four outputs are held low. A common application
• High Drive outputs (-15mA IOH, 48mA IOL)
• Meets or exceeds JEDEC standard 18 specifications
R• Power off disable outputs permit "live insertion"
T• Available in SOIC and QSOP packages
of FCT157T is to move data from two different groups of registers to a
common bus. Another application is as a function generator. The FCT157T
can generate any four of the 16 different functions of two variables with one
variable common.
TE PADRED FOFUNCTIONALBLOCKDIAGRAM
SOLE MEN IGNSS
OB ECOM DESE
NOT R NEWI1B I1D
Three other multiplexers
ZB ZD
I0B I0D
I1A Z A
I0A
INDUSTRIAL TEMPERATURE RANGE
© 2009 Integrated Device Technology, Inc.
1
AUGUST 2009
DSC-5502/6



IDT74FCT157AT
IDT74FCT157AT/CT/DT
FAST CMOS QUAD 2-INPUT MULTIPLEXER
PIN CONFIGURATION
S
I0A
I1A
ZA
I0B
I1B
ZB
GND
1
2
3
4
5
6
7
8
16 VCC
15 E
14 I0C
13 I1C
12 ZC
11 I0D
10 I1D
9 ZD
SOIC/ QSOP
TOP VIEW
INDUSTRIALTEMPERATURERANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM(2)
VTERM(3)
TSTG
IOUT
Description
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +7
–0.5 to VCC+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol
Parameter(1)
Conditions Typ. Max. Unit
CIN Input Capacitance VIN = 0V 6 10 pF
COUT
Output Capacitance VOUT = 0V
8
12 pF
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names
I0A - I0D
I1A - I1D
E
S
ZA - ZD
Description
Source 0 Data Inputs
Source 1 Data Inputs
Enable Input (Active LOW)
Select Input
Outputs
FUNCTION TABLE(1)
Inputs
E S I0 I1
H X XX
L H XL
L H XH
L L LX
L LHX
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High Impedance
Outputs
Zx
L
L
H
L
H
2





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