NPN Transistor. NSS60201LT1G Datasheet

NSS60201LT1G Transistor. Datasheet pdf. Equivalent

Part NSS60201LT1G
Description NPN Transistor
Feature NSS60201LT1G 60 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2PowerEdge family of low .
Manufacture ON Semiconductor
Datasheet
Download NSS60201LT1G Datasheet



NSS60201LT1G
NSS60201LT1G
60 V, 4.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Collector Current Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
60 Vdc
140 Vdc
8.0 Vdc
2.0 A
4.0 A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctiontoAmbient
PD (Note 1)
460
mW
3.7 mW/°C
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540 mW
4.3 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 2)
230
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710 mW
Junction and Storage
Temperature Range
TJ, Tstg
55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR4 @ 100 mm2, 1 oz. copper traces.
2. FR4 @ 500 mm2, 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2007
December, 2018 Rev. 4
1
www.onsemi.com
60 VOLTS, 4.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 70 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT23 (TO236)
CASE 318
STYLE 6
MARKING DIAGRAM
VJ M G
G
1
VJ = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSS60201LT1G
NSV60201LT1G
SOT23
(PbFree)
SOT23
(PbFree)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60201L/D



NSS60201LT1G
NSS60201LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc
Collector Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
140
Vdc
Emitter Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
8.0
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
mAdc
0.1
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
mAdc
0.1
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
Base Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 10 mA)
hFE
VCE(sat)
VBE(sat)
160
160
150
100
0.790
350
0.020
0.075
0.140
0.900
V
V
Base Emitter Turnon Voltage (Note 4)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
0.760
0.900
V
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
100
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
Cobo
380 pF
45 pF
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td − − 55 ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr − − 100 ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
1100
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf − − 120 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
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