PNP Transistor. NSS60200L Datasheet

NSS60200L Transistor. Datasheet pdf. Equivalent

Part NSS60200L
Description PNP Transistor
Feature NSS60200L 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VC.
Manufacture ON Semiconductor
Datasheet
Download NSS60200L Datasheet



NSS60200L
NSS60200L
60 V, 4.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
VCEO
−60 Vdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
VCBO
VEBO
IC
ICM
−80 Vdc
−7.0 Vdc
−2.0 A
−4.0 A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460 mW
3.7 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540 mW
4.3 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2007
October, 2016 − Rev. 3
1
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−60 VOLTS, 4.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
VG MG
G
1
VG = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
NSS60200LT1G
Package
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
NSV60200LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60200L/D



NSS60200L
NSS60200L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −6.0 Vdc)
V(BR)CEO
−60
Vdc
V(BR)CBO
−80
Vdc
V(BR)EBO
−7.0
Vdc
ICBO
mAdc
− −0.1
IEBO
mAdc
− −0.1
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.010 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.010 A)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
150
150
100
100
100
300
−0.017
−0.095
−0.180
−0.170
−0.030
−0.120
−0.270
−0.220
−0.900
−0.850
325
62
V
V
V
MHz
pF
pF
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
td − − 60 ns
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr − − 120 ns
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts − − 400 ns
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf − − 130 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
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