Power MOSFET. R6015ENJ Datasheet

R6015ENJ MOSFET. Datasheet pdf. Equivalent

R6015ENJ Datasheet
Recommendation R6015ENJ Datasheet
Part R6015ENJ
Description Power MOSFET
Feature R6015ENJ; R6015ENJ   Nch 600V 15A Power MOSFET    Datasheet VDSS 600V lOutline TO-263S   RDS(on)(Max.) .
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Datasheet
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ROHM R6015ENJ
R6015ENJ
  Nch 600V 15A Power MOSFET
   Datasheet
VDSS
600V
lOutline
TO-263S
 
RDS(on)(Max.)
0.29Ω
SC-83
ID
±15A
LPT(S)
PD
lFeatures
184W
 
      
lInner circuit
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to
  be ±20V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Quantity (pcs)
24
1000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6015ENJ
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
IDP*2
600 V
±15 A
±8.1 A
±30 A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, repetitive
IAR 2.4 A
Avalanche energy, single pulse
EAS*3
284 mJ
Avalanche energy, repetitive
EAR*3
0.43 mJ
Power dissipation (TC = 25°C)
PD*4 184 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55+150
                                                                                        
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20190527 - Rev.003    



ROHM R6015ENJ
R6015ENJ
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Reverse diode dv/dt
Drain - Source voltage slope
                Datasheet
Symbol
dv/dt
Conditions
-
Values Unit
15 V/ns
dv/dt VDS = 480V, Tj = 2550 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA*5
Tsold
Values
Min. Typ. Max.
- - 0.68
- - 80
- - 265
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 6.5A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f =1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
    
- 0.1 100 μA
- - 1000
- - ±100 nA
2 - 4V
    
- 0.26 0.29 Ω
- 0.56 -
- 7.2 -
Ω
                                             
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© 2019 ROHM Co., Ltd. All rights reserved.
2/12
                                          
20190527 - Rev.003



ROHM R6015ENJ
R6015ENJ
      
        
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Forward Transfer
Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
|Yfs|*6 VDS = 10V, ID = 7.5A
Ciss
Coss
Crss
Co(er)
VGS = 0V
VDS = 25V
f = 1MHz
 
VGS = 0V
VDS = 0V to 480V
Co(tr)
 
td(on)*6
tr*6
td(off)*6
tf*6
VDD 300V,VGS = 10V
ID = 7.5A
RL 40Ω
RG = 10Ω
Values
Min. Typ. Max.
Unit
4.0 8.0
-
S
- 910 -
- 670 -
- 90 -
pF
- 40 -
- 183 -
pF
- 30 -
- 55 -
- 105 -
- 45 -
ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg*6
Qgs*6
Qgd*6
VDD 300V,
ID = 15A,
VGS = 10V
V(plateau) VDD = 300V, ID = 15A
Values
Min. Typ. Max.
- 40 -
- 6.5 -
- 21 -
- 6.3 -
Unit
nC
V
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L100mH, VDD=50V, RG=25Ω, STARTING Tj=25
*4 TC=25
*5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm)
*6 Pulsed
                                                                                          
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3/12
20190527 - Rev.003







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