Power MOSFET. 2SCR574D3FRA Datasheet

2SCR574D3FRA MOSFET. Datasheet pdf. Equivalent

2SCR574D3FRA Datasheet
Recommendation 2SCR574D3FRA Datasheet
Part 2SCR574D3FRA
Description Power MOSFET
Feature 2SCR574D3FRA; 2SCR574D3 FRA NPN 2.0A 80V Power Transistor Parameter VCEO IC Value 80V 2A lOutline     DPAK TO-2.
Manufacture ROHM
Datasheet
Download 2SCR574D3FRA Datasheet




ROHM 2SCR574D3FRA
2SCR574D3 FRA
NPN 2.0A 80V Power Transistor
Parameter
VCEO
IC
Value
80V
2A
lOutline
 
  DPAK
TO-252
lFeatures
1) Suitable for Power Driver.
2) Complementary PNP Types : 2SAR574D3 FRA.
3) Low VCE(sat)
  VCE(sat)=300mV(Max.).
  (IC/IB=1A/50mA)
lInner circuit
Datasheet
AEC-Q101 Qualified
 
 
 
 
 
lApplication
LOW FREQUENCY AMPLIFIER
lPackaging specifications
Part No.
Package
TO-252
2SCR574D3 FRA (DPAK)
Taping Reel size Tape width Quantity
code (mm) (mm) (pcs)
TL 330 16 2500
Marking
2SCR574D3
                                                                                        
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20190527 - Rev.002



ROHM 2SCR574D3FRA
2SCR574D3 FRA
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
Tj
Tstg
Values
80
80
6
2
4
10
150
-55 to +150
Unit
V
V
V
A
A
W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Collector-base breakdown voltage BVCBO IC = 100μA
80 -
-
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
80 -
-
Emitter-base breakdown voltage BVEBO IE = 100μA
6- -
Collector cut-off current
ICBO VCB = 80V
- -1
Emitter cut-off current
IEBO VEB = 4V
- -1
Collector-emitter saturation voltage
VCE(sat) IC = 1A, IB = 50mA
- 100 300
DC current gain
hFE VCE = 3V, IC = 100mA 120 - 390
Transition frequency
f
*3
T
VCE = 10V, IE = -500mA,
f = 100MHz
-
280
-
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
- 20 -
Unit
V
V
V
μA
μA
mV
-
MHz
pF
Turn-On time
Storage time
Fall time
*1 Pw=10ms Single Pulse
*2 Tc=25
*3 Pulsed
ton IC = 1A,
IB1 = 100mA,
tstg
IB2 = -100mA,
VCC 10V,
RL = 10Ω
tf See test circuit
- 90 -
- 600 -
- 150 -
ns
ns
ns
                                            
 
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20190527 - Rev.002



ROHM 2SCR574D3FRA
2SCR574D3 FRA
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded Emitter Propagation
Characteristics
      Datasheet
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current(I)
Fig.4 DC Current Gain vs. Collector
Current(II)
                                                                                          
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3/6
20190527 - Rev.002







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