2SCR574D3FRA

2SCR574D3 FRA NPN 2.0A 80V Power Transistor Parameter VCEO IC Value 80V 2A lOutline 　 　 DPAK TO-252 lFeatures 1) Suitable for Power Driver. 2) Complementary PNP Types : 2SAR574D3 FRA. 3) Low VCE(sat) 　　VCE(sat)=300mV(Max.). 　　(IC/IB=1A/50mA) lInner circuit Datasheet AEC-Q101 Qualified 　 　 　 　 　 lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package TO-252 2SCR574D3 FRA (DPAK) Taping Reel size Tape width Quantity code (mm) (mm) (pcs) TL 330 16 2500 Marking 2SCR574D3 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/6 20190527 - Rev.002 2SCR574D3 FRA 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 Tj Tstg Values 80 80 6 2 4 10 150 -55 to +150 Unit V V V A A W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 100μA 80 - - Collector-emitter breakdown voltage BVCEO IC = 1mA 80 - - Emitter-base breakdown voltage BVEBO IE = 100μA 6- - Collector cut-off current ICBO VCB = 80V - -1 Emitter cut-off current IEBO VEB = 4V - -1 Collector-emitter saturation voltage VCE(sat) IC = 1A, IB = 50mA - 100 300 DC curr...