Datasheet
7 Circuits Darlington Transistor Array
BA12003DF-Z BA12004DF-Z
General Description BA12003DF-Z, BA12004DF-Z ...
Datasheet
7 Circuits Darlington
Transistor Array
BA12003DF-Z BA12004DF-Z
General Description BA12003DF-Z, BA12004DF-Z are darlington
transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.
Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode
Applications ■ Motor Drivers ■ LED Drivers ■ Solenoid Drivers ■ Low Side Switch
Key Specifications
■ Output break down voltage:
VCE=60V(max)
■ Output current:
Io=500mA/ch(max)
■ Operating supply voltage range: -0.5V to +30V
■ Operating temperature range: -40°C to +85°C
■ DC current gain:
hfe=1000(min)
■ Input resistor:
BA12003DF-Z Rin=2.7kΩ
BA12004DF-Z Rin=10.5kΩ
Packages SOP-J16A
W(Typ) x D(Typ) x H(Max) 9.90mm x 6.00mm x 1.725mm
SOP-J16A BA12003DF-Z / BA12004DF-Z
Typical Application Circuit
VCC
VCC
VCC
16 15 14 13 12 11 10 9
12345678
μCOM
○Product structure: Silicon monolithic integrated circuit ○This product has not designed protection against radioactive rays
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001
1/13
TSZ02201-0GPG0GZ00010-1-2 24.Aug.2018 Rev.009
BA12003DF-Z BA12004DF-Z
Pin Configuration
SOP-J16A (TOP VIEW)
OUT 1
OUT 2
OUT 3
OUT 4
OUT 5
OUT 6
OUT 7
COM
16 15 14 13 12 11 10 9
Block Diagram
16 15 14 13 12 11 10 9
12345678
IN1 IN2 IN3 IN4 IN5 IN6 IN7 GND
Pin Description
...