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BA12003DF-Z

ROHM

Darlington Transistor Array

Datasheet 7 Circuits Darlington Transistor Array BA12003DF-Z BA12004DF-Z General Description BA12003DF-Z, BA12004DF-Z ...


ROHM

BA12003DF-Z

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Description
Datasheet 7 Circuits Darlington Transistor Array BA12003DF-Z BA12004DF-Z General Description BA12003DF-Z, BA12004DF-Z are darlington transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode Applications ■ Motor Drivers ■ LED Drivers ■ Solenoid Drivers ■ Low Side Switch Key Specifications ■ Output break down voltage: VCE=60V(max) ■ Output current: Io=500mA/ch(max) ■ Operating supply voltage range: -0.5V to +30V ■ Operating temperature range: -40°C to +85°C ■ DC current gain: hfe=1000(min) ■ Input resistor: BA12003DF-Z Rin=2.7kΩ BA12004DF-Z Rin=10.5kΩ Packages SOP-J16A W(Typ) x D(Typ) x H(Max) 9.90mm x 6.00mm x 1.725mm SOP-J16A BA12003DF-Z / BA12004DF-Z Typical Application Circuit VCC VCC VCC 16 15 14 13 12 11 10 9 12345678 μCOM ○Product structure: Silicon monolithic integrated circuit ○This product has not designed protection against radioactive rays www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/13 TSZ02201-0GPG0GZ00010-1-2 24.Aug.2018 Rev.009 BA12003DF-Z BA12004DF-Z Pin Configuration SOP-J16A (TOP VIEW) OUT 1 OUT 2 OUT 3 OUT 4 OUT 5 OUT 6 OUT 7 COM 16 15 14 13 12 11 10 9 Block Diagram 16 15 14 13 12 11 10 9 12345678 IN1 IN2 IN3 IN4 IN5 IN6 IN7 GND Pin Description ...




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