RSQ015P10

RSQ015P10 Pch -100V -1.5A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD -100V 470mW -1.5A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline TSMT6 SOT-457T (6) (5) (4) lInner circuit (1) (2) (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 Tape width (mm) Type Basic ordering unit (pcs) 8 3,000 Taping code TR Marking ZN Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value -100 1.5 6.0 20 1.25 0.6 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/11 2014.05 - Rev.C RSQ015P10 lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 100 °C/W - - 208 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA -100 - -V Breakdown voltage temperature coefficient ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C - Zero gate voltage drain current Gat...