Power MOSFET. RSQ015P10 Datasheet

RSQ015P10 MOSFET. Datasheet pdf. Equivalent

RSQ015P10 Datasheet
Recommendation RSQ015P10 Datasheet
Part RSQ015P10
Description Power MOSFET
Feature RSQ015P10; RSQ015P10 Pch -100V -1.5A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD -100V 470mW -1.5A 1.2.
Manufacture ROHM
Datasheet
Download RSQ015P10 Datasheet




ROHM RSQ015P10
RSQ015P10
Pch -100V -1.5A Power MOSFET
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
-100V
470mW
-1.5A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TSMT6
SOT-457T
(6)
(5)
(4)
lInner circuit
(1)
(2)
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
180
Tape width (mm)
Type
Basic ordering unit (pcs)
8
3,000
Taping code
TR
Marking
ZN
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
-100
1.5
6.0
20
1.25
0.6
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.C



ROHM RSQ015P10
RSQ015P10
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJA *4
Values
Min. Typ. Max.
Unit
- - 100 °C/W
- - 208 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
-100
-
-V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID= -1mA
ΔTj referenced to 25°C
-
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
IDSS
IGSS
VGS (th)
VDS = -100V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = -10V, ID = -1mA
ΔV(GS)th ID= -1mA
ΔTj referenced to 25°C
-
-
-1.0
-
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS= -10V, ID= -1.5A
RDS(on) *5 VGS= -4.5V, ID= -0.75A
VGS= -4.0V, ID= -0.75A
RG
gfs *5
VGS= -10V, ID= -1.5A, Tj=125C
f = 1MHz, open drain
VDS= -10V, ID= -1.5A
-
-
-
-
-
1.5
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
-109
-
-
-
3.2
350
380
400
610
8.5
4.0
- mV/°C
-1
10
-2.5
mA
mA
V
- mV/°C
470
510
mW
540
850
-W
-S
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/11
2014.05 - Rev.C



ROHM RSQ015P10
RSQ015P10
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Input capacitance
Ciss VGS = 0V
- 950 -
Output capacitance
Coss VDS = -25V
- 45 -
Reverse transfer capacitance
Crss f = 1MHz
- 20 -
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *5 VDD -50V, VGS = -10V
-
10
-
tr *5 ID = -0.75A
- 15 -
td(off) *5 RL = 66W
- 60 -
tf *5 RG = 10W
- 10 -
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *5
Qgs *5
Qgd *5
VDD -50V, ID= -1.5A
VGS = -5V
VDD -50V, ID= -1.5A
VGS = -10V
VDD -50V, ID= -1.5A
VGS = -5V
-
-
-
-
17.0
32
4.5
5.0
-
-
-
-
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Forward voltage
IS *1 Ta = 25°C
VSD *5 VGS = 0V, Is = -1.5A
-
-
- -1.0
- -1.2
Unit
A
V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/11
2014.05 - Rev.C







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