Power MOSFET. RCX051N25 Datasheet

RCX051N25 MOSFET. Datasheet pdf. Equivalent

RCX051N25 Datasheet
Recommendation RCX051N25 Datasheet
Part RCX051N25
Description Power MOSFET
Feature RCX051N25; RCX051N25 Nch 250V 5.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 1360mW 5.0A 30W lF.
Manufacture ROHM
Datasheet
Download RCX051N25 Datasheet




ROHM RCX051N25
RCX051N25
Nch 250V 5.0A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
250V
1360mW
5.0A
30W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25°C
Ta = 25°C
Junction temperature
Range of storage temperature
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Bulk
-
-
500
-
RCX051N25
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
250
5.0
2.7
20
30
1.82
2.5
30
2.23
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2012.08 - Rev.A



ROHM RCX051N25
RCX051N25
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 4.16 °C/W
- - 56 °C/W
- - 265 °C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage drain current
VDS = 250V, VGS = 0V
IDSS
Tj = 25°C
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
Static drain - source
on - state resistance
VGS = 10V, ID = 2.5A
RDS(on) *4 VGS = 10V, ID = 2.5A
Tj = 125°C
Forward transfer admittance
gfs VDS = 10V, ID = 2.5A
Values
Min. Typ. Max.
250 -
-
- - 10
- - 100
3.5 - 5.5
- 970 1360
- 2100 2950
1.25 2.50
-
Unit
V
mA
nA
V
mW
S
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/12
2012.08 - Rev.A



ROHM RCX051N25
RCX051N25
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Input capacitance
Ciss VGS = 0V
- 350
Output capacitance
Coss VDS = 25V
- 30
Reverse transfer capacitance
Crss f = 1MHz
- 15
Turn - on delay time
td(on) *4 VDD 125V, VGS = 10V
-
15
-
Rise time
tr *4 ID = 2.5A
- 16 -
Turn - off delay time
td(off) *4 RL = 49.9W
- 18 -
Fall time
tf *4 RG = 10W
- 10 -
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *4
Qgs *4
Qgd *4
V(plateau)
VDD 125V
ID = 5.0A
VGS = 10V
VDD 125V, ID = 5.0A
Values
Min. Typ. Max.
- 8.5 -
- 3.5 -
- 3.5 -
- 8.0 -
Unit
nC
V
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Continuous source current
Pulsed source current
Forward voltage
Reverse recovery time
Reverse recovery charge
IS *1
ISM *2
VSD *4
trr *4
Qrr *4
Tc = 25°C
VGS = 0V, IS = 5.0A
IS = 2.5A
di/dt = 100A/ms
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L 500mH, VDD = 50V, Rg = 10W, starting Tj = 25°C
*4 Pulsed
Min.
-
-
-
-
-
Values
Typ.
-
-
-
90
225
Max.
5
20
1.5
-
-
Unit
A
A
V
ns
nC
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/12
2012.08 - Rev.A







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