MOSFET. EM6K34 Datasheet

EM6K34 MOSFET. Datasheet pdf. Equivalent

EM6K34 Datasheet
Recommendation EM6K34 Datasheet
Part EM6K34
Description MOSFET
Feature EM6K34; 0.9V Drive Nch + Nch MOSFET EM6K34  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) E.
Manufacture ROHM
Datasheet
Download EM6K34 Datasheet




ROHM EM6K34
0.9V Drive Nch + Nch MOSFET
EM6K34
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
EMT6
SOT-563
Features
1) High speed switing.
2) Small package(EMT6).
3)Ultra low voltage drive(0.9V drive).
(6) (5) (4)
(1) (2) (3)
Abbreviated symbol : K34
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
EM6K34
Taping
T2R
8000
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD *2
Tch
Tstg
50
8
200
800
125
800
150
120
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Unit
V
V
mA
mA
mA
mA
mW / TOTAL
mW / ELEMENT
C
C
Inner circuit
(6) (5)
(4)
1
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(3)
2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
Thermal resistance
Parameter
Channel to Ambient
Symbol
Rth (ch-a)*
* Each terminal mounted on a recommended land.
Limits
833
1042
Unit
C/ W /TOTAL
C/ W /ELEMENT
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.11 - Rev.A



ROHM EM6K34
EM6K34
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
*Pulsed
l Yfs l *
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Min.
-
50
-
0.3
-
-
-
-
-
0.2
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
1.6
1.7
2.0
2.2
3.0
-
26
6
3
5
8
17
43
Max.
10
-
1
0.8
2.2
2.4
2.8
3.3
9.0
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=8V, VDS=0V
V ID=1mA, VGS=0V
A VDS=50V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
ID=200mA, VGS=1.5V
ID=100mA, VGS=1.2V
ID=10mA, VGS=0.9V
S ID=200mA, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=100mA, VDD 25V
ns VGS=4.5V
ns RL=250
ns RG=10
Data Sheet
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol
VSD *
Min.
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2 V Is=200mA, VGS=0V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.11- Rev.A



ROHM EM6K34
EMK6K34
Electrical characteristics curves
Data Sheet
0.2
0.15
0.1
0.05
0
0
VGS= 0.9V
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.8V
Ta=25C
Pulsed
VGS= 0.7V
0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics( )
0.2
0.15
0.1
0.05
VGS= 0.9V
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.8V
Ta=25C
Pulsed
VGS= 0.7V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.2 Typical Output Characteristics( )
1
0.1
0.01
VDS= 10V
Pulsed
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
0.001
0
0.2 0.4 0.6 0.8
1
GATE-SOURCE VOLTAGE : VGS[V]
Fig.3 Typical Transfer Characteristics
10000
Ta= 25C
Pulsed
10000
VGS= 4.5V
Pulsed
10000
VGS= 2.5V
Pulsed
1000
100
0.001
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( )
1000
100
0.001
0.01
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
0.1 1
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( )
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( )
10000
VGS= 1.5V
Pulsed
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( )
10000
VGS= 1.2V
Pulsed
10000
VGS= 0.9V
Pulsed
1000
100
0.001
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
0.01 0.1
1
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( )
1000
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( )
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.11 - Rev.A







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)