Power MOSFET. R6530ENZ Datasheet

R6530ENZ MOSFET. Datasheet pdf. Equivalent

R6530ENZ Datasheet
Recommendation R6530ENZ Datasheet
Part R6530ENZ
Description Power MOSFET
Feature R6530ENZ; .
Manufacture ROHM
Datasheet
Download R6530ENZ Datasheet




ROHM R6530ENZ
R6530ENZ
  Nch 650V 30A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
650V
0.140Ω
±30A
86W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Parallel use is easy
4) Pb-free plating ; RoHS compliant
lOutline
TO-3PF
 
 
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Tube
Packing code
C17
Marking
R6530ENZ
Quantity (pcs)
300
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
650
V
±30
A
±90
A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS
5.2
A
Avalanche energy, single pulse
EAS*3
730
mJ
Power dissipation (Tc = 25°C)
PD
86
W
Junction temperature
Tj
150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20191226 - Rev.002    



ROHM R6530ENZ
R6530ENZ
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
 
                  
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
-
- 1.5 /W
-
- 40 /W
-
- 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 650V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = VGS, ID = 960μA
VGS = 10V, ID = 14.5A
RDS(on)*5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
650 -
-
V
 
 
 
-
- 100 μA
-
- 1000
-
- ±100 nA
2.0 - 4.0 V
 
 
 
- 0.125 0.140 Ω
- 0.255 -
- 4.0 - Ω
                                                                                         
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20191226 - Rev.002



ROHM R6530ENZ
R6530ENZ
          
                Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss VGS = 0V
- 2100 -
Coss VDS = 25V
- 2300 - pF
Crss f = 1MHz
- 230 -
td(on)*5 VDD 300V, VGS = 10V
-
30
-
tr*5
td(off)*5
ID = 15A
RL 20Ω
- 70 -
ns
- 200 -
tf*5 RG = 10Ω
- 70 -
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg*5
Qgs*5
Qgd*5
V(plateau)
VDD 300V
ID = 30A
VGS = 10V
VDD 300V, ID = 30A
Values
Unit
Min. Typ. Max.
- 90 -
- 15 - nC
- 45 -
- 6.5 -
V
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L50mH, VDD=50V, RG=25Ω, STARTING Tj=25
*4 TC=25
*5 Pulsed
                                                                                         
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© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20191226 - Rev.002







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