Power MOSFET. R6530ENZ Datasheet

R6530ENZ MOSFET. Datasheet pdf. Equivalent

Part R6530ENZ
Description Power MOSFET
Feature .
Manufacture ROHM
Datasheet
Download R6530ENZ Datasheet



R6530ENZ
R6530ENZ
  Nch 650V 30A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
650V
0.140Ω
±30A
86W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Parallel use is easy
4) Pb-free plating ; RoHS compliant
lOutline
TO-3PF
 
 
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Tube
Packing code
C8
Marking
R6530ENZ
Basic ordering unit (pcs)
360
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
650 V
±30 A
±90 A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 5.2 A
Avalanche energy, single pulse
EAS*3
730 mJ
Power dissipation (Tc = 25°C)
PD 86 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170206 - Rev.001    



R6530ENZ
R6530ENZ
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 1.5 /W
- - 40 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 650V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = VGS, ID = 960μA
VGS = 10V, ID = 14.5A
RDS(on)*5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
650 - - V
   
- - 100 μA
- - 1000
- - ±100 nA
2.0 - 4.0 V
   
- 0.125 0.140 Ω
- 0.255 -
- 4.0 - Ω
                                                                                         
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
20170206 - Rev.001





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