Recovery Diode. MH2101WZ Datasheet

MH2101WZ Diode. Datasheet pdf. Equivalent

Part MH2101WZ
Description Fast Recovery Diode
Feature MH2101WZ 650V 30A Fast Recovery Diode VRM IF (Nominal) VF (Typ.) Max. Possible Chips per Wafer 650.
Manufacture ROHM
Datasheet
Download MH2101WZ Datasheet



MH2101WZ
MH2101WZ
650V 30A Fast Recovery Diode
VRM
IF (Nominal)
VF (Typ.)
Max. Possible Chips per Wafer
650V
30A
1.45V
1612pcs
lFeatures
1) Light Punch Through Type
2) Low Forward Voltage
3) Very Fast & Soft Recovery
4) Low Recovery Loss
lApplication
Free Wheeling
lOutline
Wafer
lInner Circuit
(1)
(2)
Datasheet
(1) Anode
(2) Cathode
lAbsolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage, Tj = 25°C
Forward Current
Pulsed Forward Current
Operating Junction Temperature
*1 Depending on thermal properties of assembly
*2 Pulse width limited by Tjmax.
Symbol
VRM
IF*1
IFP*2
Tj
Value
650
*1)
120
-40 to +175
Unit
V
A
A
°C
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Breakdown Voltage
BV IR = 10μA
650 -
-V
Reverse Current
IR VR = 650V
Forward Voltage
IF = 30A,
VF*3 Tj = 25°C
Tj = 175°C
*3 Design assurance without measurement
- - 10 μA
- 1.45 1.9 V
- 1.55 -
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/2
2019.08 - Rev.A



MH2101WZ
MH2101WZ
lChip Information
Datasheet
2250
325 2900
3000
0.10±0.03
3.00
Unitmm
Unit : μm
: Pad Area
: Anode Bonding Pad
Backside : Cathode
Wafer Size
150mm
Wafer Thickness
0.07±0.01mm
Chip Size
3.00mm×3.00mm
Cut Line Width
0.10±0.03mm
Top Side Metallization
AlSiCu:5.0μm
Back Side Metallization Ti/Ni:0.4μm/Au:0.05μm
Passivation
Polyimide
lFurther Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design
and mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
RGTV60TS65D
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/2
2019.08 - Rev.A





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