Power MOSFET. RCJ200N20 Datasheet

RCJ200N20 MOSFET. Datasheet pdf. Equivalent

RCJ200N20 Datasheet
Recommendation RCJ200N20 Datasheet
Part RCJ200N20
Description Power MOSFET
Feature RCJ200N20; RCJ200N20 Nch 200V 20A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 130m 20A 106W Fe.
Manufacture ROHM
Datasheet
Download RCJ200N20 Datasheet




ROHM RCJ200N20
RCJ200N20
Nch 200V 20A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
200V
130m
20A
106W
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Application
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
Absolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25°C
Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Tc = 25°C
Ta = 25°C *4
Range of storage temperature
Outline
LPT(S)
(SC-83)
(2)
(1)
Inner circuit
(3)
(1) Gate
1 (2) Drain
(3) Source
1 BODY DIODE
(1) (2) (3)
Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Quantity (pcs)
Taping code
Marking
Taping
330
24
1,000
TL
RCJ200N20
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
200
20
10.9
80
30
32.3
10
106
1.56
150
55 to 150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
2019.05 - Rev.C



ROHM RCJ200N20
RCJ200N20
Thermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 1.17 °C/W
- - 80 °C/W
- - 265 °C
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
VDS = 200V, VGS = 0V
Zero gate voltage drain current
Tj = 25°C
IDSS
VDS = 200V, VGS = 0V
Tj = 125°C
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
Static drain - source
on - state resistance
VGS = 10V, ID = 10A
RDS(on) *5 VGS = 10V, ID = 10A
Tj = 125°C
Forward transfer admittance
gfs VDS = 10V, ID = 10A
Values
Min. Typ. Max.
200 -
-
- - 25
- - 100
- - 100
3.0 - 5.0
- 100 130
- 220 310
4.9 9.8
-
Unit
V
A
nA
V
m
S
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/12
2019.05 - Rev.C



ROHM RCJ200N20
RCJ200N20
Data Sheet
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Input capacitance
Output capacitance
Ciss
Coss
VGS = 0V
VDS = 25V
- 1900 -
- 120 -
Reverse transfer capacitance
Crss f = 1MHz
- 70 -
Turn - on delay time
td(on) *5 VDD 100V, VGS = 10V
-
35
-
Rise time
tr *5 ID = 10A
- 100 -
Turn - off delay time
td(off) *5 RL = 10
- 60 -
Fall time
tf *5 RG = 10
- 45 -
Unit
pF
ns
Gate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *5
Qgs *5
Qgd *5
V(plateau)
VDD 100V
ID = 10A
VGS = 10V
VDD 100V, ID = 10A
Values
Min. Typ. Max.
- 40 -
- 15 -
- 15 -
- 8.0 -
Unit
nC
V
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Continuous source current
Pulsed source current
Forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
Conditions
IS *1
ISM *2
VSD *5
trr *5
Qrr *5
Tc = 25°C
VGS = 0V, IS = 20A
IS = 10A
di/dt = 100A/s
Min.
-
-
-
-
-
Values
Typ.
-
-
-
100
350
Max.
20
80
1.5
-
-
*1 Limited only by maximum temperature allowed.
*2 Pw 10s, Duty cycle 1%
*3 L 500H, VDD = 50V, Rg = 25, starting Tj = 25°C
*4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm)
*5 Pulsed
Unit
A
A
V
ns
nC
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/12
2019.05 - Rev.C







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