RCJ200N20

RCJ200N20 Nch 200V 20A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 130m 20A 106W Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive Absolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C *4 Range of storage temperature Outline LPT(S) (SC-83) (2) (1) Inner circuit (3) (1) Gate ∗1 (2) Drain (3) Source 1 BODY DIODE (1) (2) (3) Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Quantity (pcs) Taping code Marking Taping 330 24 1,000 TL RCJ200N20 Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 IAR *3 PD PD Tj Tstg Value 200 20 10.9 80 30 32.3 10 106 1.56 150 55 to 150 Unit V A A A V mJ A W W °C °C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 2019.05 - Rev.C RCJ200N20 Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Min. Typ. Max. Unit - - 1.17 °C/W - - 80 °C/W - - 265 °C Electrical characteristics(Ta = 25°C) Parameter ...