Bipolar Transistor. MG6401WZ Datasheet

MG6401WZ Transistor. Datasheet pdf. Equivalent

MG6401WZ Datasheet
Recommendation MG6401WZ Datasheet
Part MG6401WZ
Description Insulated Gate Bipolar Transistor
Feature MG6401WZ; MG6401WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible.
Manufacture ROHM
Datasheet
Download MG6401WZ Datasheet




ROHM MG6401WZ
MG6401WZ
650V 30A Insulated Gate Bipolar Transistor
VCES
IC (Nominal)
VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V
30A
1.5V
1026pcs
lFeatures
1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation Voltage
3) High Speed Switching & Low Switching Loss
4) Short Circuit Withstand Time 2μs
lOutline
Wafer
lInner Circuit
(1)
(2)
(3)
lApplication
Solar Inverter
UPS
Welding
IH
PFC
lAbsolute Maximum Ratings
Parameter
Collector - Emitter Voltage, Tj = 25°C
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Operating Junction Temperature
*1 Depending on thermal properties of assembly
*2 Pulse width limited by Tjmax.
Symbol
VCES
VGES
IC*1
ICP*2
Tj
Datasheet
(1) Gate
(2) Collector
(3) Emitter
Value
650
±30
*1)
120
-40 to +175
Unit
V
V
A
A
°C
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© 2019 ROHM Co., Ltd. All rights reserved.
1/3
2019.08 - Rev.A



ROHM MG6401WZ
MG6401WZ
Datasheet
lDesign Assurance
Parameter
Symbol
Conditions
Short Circuit Withstand Time
VCC 360V,
tsc*3 VGE = 15V,
Tj = 25
Reverse Bias Safe Operating
Area
IC = 120A, VCC = 520V,
RBSOA*3 VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175
*3 Design assurance without measurement
Values
Min. Typ. Max.
2- -
FULL SQUARE
Unit
μs
-
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650 -
-
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
-
- ±200 nA
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 21.0mA
5.0
6.0
7.0
Collector - Emitter Saturation
Voltage
IC = 30A, VGE = 15V,
VCE(sat)*3 Tj = 25°C
Tj = 175°C
Input Capacitance
Cies VCE = 30V,
Output Capacitance
Coes VGE = 0V,
Reverse transfer Capacitance Cres f = 1MHz
Total Gate Charge
Qg VCE = 400V,
Gate - Emitter Charge
Qge IC = 30A,
Gate - Collector Charge
Qgc VGE = 15V
*3 Design assurance without measurement
- 1.5 1.9
- 1.85 -
- 1730 -
- 74 -
- 30 -
- 64 -
- 14 -
- 24 -
V
V
pF
nC
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/3
2019.08 - Rev.A



ROHM MG6401WZ
MG6401WZ
lChip Information
320
20
Datasheet
335 2400
455 3310
3400
0.09±0.03
3.40
Unitmm
Unit : μm
: Pad Area
: Gate Bonding Pad
: Emitter Bonding Pad
Backside : Collector
Wafer Size
150mm
Wafer Thickness
0.07±0.01mm
Chip Size
3.40mm×4.20mm
Cut Line Width
0.09±0.03mm
Top Side Metallization
AlSiCu:4.4μm
Back Side Metallization Ti/Ni:0.4μm/Au:0.05μm
Passivation
Polyimide
lFurther Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design
and mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
RGTV60TS65
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
3/3
2019.08 - Rev.A







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