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BD78308EFJ-M Dataheets PDF



Part Number BD78308EFJ-M
Manufacturers ROHM
Logo ROHM
Description Monaural Speaker Amplifier
Datasheet BD78308EFJ-M DatasheetBD78308EFJ-M Datasheet (PDF)

Datasheet Class-AB Speaker Amplifier Series 1.2 W Monaural Speaker Amplifier for Automotive BD783xxEFJ-M Series (Including products under development) General Description BD783xxEFJ-M Series are Class-AB monaural speaker amplifiers designed for automotive. Class-AB amplifiers have no requirements for care about EMI noise. Adopting power package HTSOP-J8 achieves high output power. Low quiescent current can reduce battery consumption. Shutdown current is also very low (0.1 µA Typ) and pop nois.

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Datasheet Class-AB Speaker Amplifier Series 1.2 W Monaural Speaker Amplifier for Automotive BD783xxEFJ-M Series (Including products under development) General Description BD783xxEFJ-M Series are Class-AB monaural speaker amplifiers designed for automotive. Class-AB amplifiers have no requirements for care about EMI noise. Adopting power package HTSOP-J8 achieves high output power. Low quiescent current can reduce battery consumption. Shutdown current is also very low (0.1 µA Typ) and pop noise level when switching to shutdown is very small, so this device is suitable for applications in which the mode often changes between “shutdown state” and “active state”. Features  AEC-Q100 Qualified(Note 1)  Pop Noise Reduction Function  Shutdown Function  Protection Functions - Over Current Protection - Thermal Shutdown - Under Voltage Lock Out (UVLO)  Power Package with Thermal Pad HTSOP-J8 (Note 1) Grade2 Applications  Automotive Instruments Key Specifications  Output Power 1.2 W (Typ) (VDD = 5 V, RL = 8 Ω, THD+N = 1 %)  Quiescent Current 2.5 mA (Typ)  Shutdown Current 0.1 µA (Typ)  Total Harmonic Distortion + Noise (RL = 8 Ω, f = 1 kHz)  Output Noise Voltage 0.05 % (Typ)(Note 2) 15 μVRMS (Typ)(Note 2)  Voltage Gain 6.0 dB to 26.0 dB (Typ)  Operating Temperature Range -40 ºC to +105 ºC (Note 2) Characteristic of BD78306EFJ-M Package HTSOP-J8 W (Typ) x D (Typ) x H (Max) 4.90 mm x 6.00 mm x 1.00 mm HTSOP-J8 Typical Application Circuit 1 SDB From System Control C1 2 BIAS 0.47 µF Input Signal C2 3 INP 0.47 µF C3 4 INN 0.47 µF OUTN 8 GND 7 VDD 6 C4 10 µF VDD OUTP 5 Figure 1 Product structure : Silicon integrated circuit www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 This product has no designed protection against radioactive rays. 1/25 TSZ02201-0C1C0EC00760-1-2 19.Jul.2019 Rev.001 BD783xxEFJ-M Series (Including products under development) Pin Configuration (TOP VIEW) SDB 1 BIAS 2 INP 3 INN 4 EXP-PAD 8 OUTN 7 GND 6 VDD 5 OUTP Caution: VDD and GND pins adjoin each other. In case that these pins are shorted each other, it may make characteristics of power supply device worse, or it may damage power supply device. Considering this point, select power supply device which has protection functions as over current protection. Pin Description Pin No. 1 2 3 4 5 6 7 8 - Pin Name SDB BIAS INP INN OUTP VDD GND OUTN EXP-PAD Function Shutdown Bias Positive differential input Negative differential input Positive output Power supply Ground Negative output Connect the EXP-PAD to Ground Control Pin’s Setting SDB pin High Low Operating Mode Active Shutdown Block Diagram INP 3 INN 4 BIAS 2 6 VDD Rf Ri Ri Rf Ri Rf Ri Rf Bias SDB 1 GND 7 Figure 2 OUTP 5 OUTN 8 Over Current Pro tection Thermal Shu tdo wn Under Vol tage Lock O ut Part Number BD78306EFJ-M BD78308EFJ-M*1 BD78310EFJ-M BD78312EFJ-M*1 BD78314EFJ-M*1 BD78316EFJ-M*1 BD78318EFJ-M*1 BD78320EFJ-M*1 BD78322EFJ-M*1 BD78324EFJ-M*1 BD.


BD78306EFJ-M BD78308EFJ-M BD78310EFJ-M


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