Bipolar Transistor. MG6403WZ Datasheet

MG6403WZ Transistor. Datasheet pdf. Equivalent

MG6403WZ Datasheet
Recommendation MG6403WZ Datasheet
Part MG6403WZ
Description Insulated Gate Bipolar Transistor
Feature MG6403WZ; MG6403WZ 650V 80A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible.
Manufacture ROHM
Datasheet
Download MG6403WZ Datasheet




ROHM MG6403WZ
MG6403WZ
650V 80A Insulated Gate Bipolar Transistor
VCES
IC (Nominal)
VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V
80A
1.5V
444pcs
lFeatures
1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation Voltage
3) High Speed Switching & Low Switching Loss
4) Short Circuit Withstand Time 2μs
lOutline
Wafer
lInner Circuit
(1)
(2)
(3)
lApplication
Solar Inverter
UPS
Welding
IH
PFC
Datasheet
(1) Gate
(2) Collector
(3) Emitter
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Collector - Emitter Voltage
VCES
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Operating Junction Temperature
VGES
IC*1
ICP*2
Tj
*1 Depending on thermal properties of assembly
*2 Pulse width limited by Tjmax.
Value
650
±30
*1)
320
-40 to +175
Unit
V
V
A
A
°C
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© 2019 ROHM Co., Ltd. All rights reserved.
1/3
2019.08 - Rev.A



ROHM MG6403WZ
MG6403WZ
Datasheet
lDesign Assurance
Parameter
Symbol
Conditions
Short Circuit Withstand Time
VCC 360V,
tsc*3 VGE = 15V,
Tj = 25
Reverse Bias Safe Operating
Area
IC = 320A, VCC = 520V,
RBSOA*3 VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175
*3 Design assurance without measurement
Values
Min. Typ. Max.
2- -
FULL SQUARE
Unit
μs
-
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650 -
-
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
-
- ±200 nA
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 57.1mA
5.0
6.0
7.0
Collector - Emitter Saturation
Voltage
IC = 80A, VGE = 15V,
VCE(sat)*3 Tj = 25°C
Tj = 175°C
Input Capacitance
Cies VCE = 30V,
Output Capacitance
Coes VGE = 0V,
Reverse transfer Capacitance Cres f = 1MHz
Total Gate Charge
Qg VCE = 400V,
Gate - Emitter Charge
Qge IC = 80A,
Gate - Collector Charge
Qgc VGE = 15V
*3 Design assurance without measurement
- 1.5 1.9
- 1.85 -
- 4810 -
- 184 -
- 79 -
- 171 -
- 33 -
- 59 -
V
V
pF
nC
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/3
2019.08 - Rev.A



ROHM MG6403WZ
MG6403WZ
lChip Information
Datasheet
320
300
335 4700
455 5610
5700
0.09±0.03
5.70
Unitmm
Unit : μm
: Pad Area
: Gate Bonding Pad
: Emitter Bonding Pad
Backside : Collector
Wafer Size
150mm
Wafer Thickness
0.07±0.01mm
Chip Size
5.70mm×5.70mm
Cut Line Width
0.09±0.03mm
Top Side Metallization
AlSiCu:4.4μm
Back Side Metallization Ti/Ni:0.4μm/Au:0.05μm
Passivation
Polyimide
lFurther Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design
and mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
RGTVX6TS65
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
3/3
2019.08 - Rev.A







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