MG6403WZ

MG6403WZ 650V 80A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 80A 1.5V 444pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOutline Wafer lInner Circuit (1) (2) (3) lApplication Solar Inverter UPS Welding IH PFC Datasheet (1) Gate (2) Collector (3) Emitter lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Collector - Emitter Voltage VCES Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature VGES IC*1 ICP*2 Tj *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Value 650 ±30 *1) 320 -40 to +175 Unit V V A A °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/3 2019.08 - Rev.A MG6403WZ Datasheet lDesign Assurance Parameter Symbol Conditions Short Circuit Withstand Time VCC ≦ 360V, tsc*3 VGE = 15V, Tj = 25℃ Reverse Bias Safe Operating Area IC = 320A, VCC = 520V, RBSOA*3 VP = 650V, VGE = 15V, RG = 100Ω, Tj = 175℃ *3 Design assurance without measurement Values Min. Typ. Max. 2- - FULL SQUARE Unit μs - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - V Collector Cut...